High-Resolution Electron Microscope Study of Silicon on Insulator Structure Grown by Lateral Solid Phase Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1986-10-20

著者

• HORIUCHI Shigeo

  National Institute for Research in Inorganic Materials

• OHDOMARI Iwao

  School of Science and Engineering, Waseda University

• Kawarada Hiroshi

  School Of Science And Engineering Waseda University

• Kawarada Hiroshi

  School Of Science & Engineering Waseda University

• 大泊 巌

  早大理工

• Ohdomari Iwao

  School Of Science And Engineering Waseda University

• Ohdomari Iwao

  School Of Science And Engineering Waseda University:kagami-memorial Laboratory For Materials Science

• Horiuchi S

  National Inst. Res. In Inorganic Materials Tsukuba Jpn

• Horiuchi S

  National Inst. Res. In Inorganic Materials Ibaraki Jpn

• Horiuchi Shigeo

  National Institute For Research In Inorganic Materials (nirim)

• KUNII YASUO

  Department of Surgery, Sendai National Hospital

• UENO Tomo

  School of Science and Engineering, Waseda University

• KUNII Yasuo

  Electrical Communication Laboratories, Nippon Telegraph and Telephone Corporation

• Kawarada H

  School Of Science And Engineering Waseda University

• Ueno T

  Tokyo Univ. Agriculture And Technol. Tokyo Jpn

• Ueno Tomo

  School Of Science And Engineering Waseda University

• Kunii Y

  Institute Of Materials Science University Of Tsukuba

• Kunii Yasuo

  Electrical Communication Laboratories

• Horiuchi S

  National Institute For Research In Inorganic Materials

• Kawarada Hiroshi

  Nanotechnology Research Center Waseda University

関連論文

• Planar Defects in the New Superconducting Oxide (Eu_Ce_x)_2(Ba_Eu_y)_2Cu_3O z_Observed by High-Resolution Transmission Electron Microscopy
• A New Family of Superconducting Copper Oxides : (Ln_Ce_x) 2(Ba_Ln_y)_2Cu_3O_ (Ln : Nd, Sm, Eu)
• A Novel Process for Fabrication of Gated Silicon Field Emitter Array Taking Advantage of Ion Bombardment Retarded Etching
• Holes in the Valence Band of Superconducting Boron-Doped Diamond Film Studied by Soft X-ray Absorption and Emission Spectroscopy(Condensed matter : electronic structure and electrical, magnetic, and optical properties)
• Planar Defects in the New Superconducting Oxide (Eu_Ce_x)_2(Ba_Eu_y)_2Cu_3O_z Observed by High-Resolution Transmission Electron Microscopy
• A New Family Superconducting Copper Oxides : (Ln_Ce_x)_2(Ba_Ln_y)_2Cu_3O_(Ln:Nd,Sm,EU)
• Hybridization of Deoxyribonucleic Acid and Immobilization of Green Fluorescent Protein on Nanostructured Organosilane Templates
• Multiresolution Model Construction from Scattered Range Data by Hierarchical Cube-Based Segmentation
• Effects of Plasma Potential on Diamond Deposition at Low Pressure Using Magneto-Microwave Plasma Chemical Vapor Deposition
• Low-Temperature Synthesis of Diamond Films Using Magneto-Microwave Plasma CVD
• The Synthesis of Diamond Films at Lower Pressure and Lower Temperature Using Magneto-Microwave Plasma CVD
• Electron Beam Lithography on Organosilane Self-Assembled Monolayer Resist
• Effect of Deuterium Anneal on SiO_2/Si(100) Interface Traps and Electron Spin Resonance Signals of Ultrathin SiO_2 Films
• New Approximant of Twelvefold Quasicrystal in Ta-Te : Electron Diffraction Study
• Fabrication of T-Shaped Gate Diamond Metal-Insulator-Semiconductor Field-Effect Transistors
• RF Performance of Diamond Surface-Channel Field-Effect Transistors(Heterostructure Microelectronics with TWHM2003)
• High Frequency Diamond FETs Utilizing Hydrogen-Terminated Surface Channel
• High-Resolution Electron Microscope Study of Silicon on Insulator Structure Grown by Lateral Solid Phase Epitaxy
• Structural Study of PtSi/(111)Si Interface with High-Resolution Electron Microscopy
• Blue and Green Cathodoluminescence of Synthesized Diamond Films Formed by Plasma-Assisted Chemical Vapour Deposition : Optical Properties of Condensed Matter
• Characterization of Diamond Particles and Films Formed by Plasma-Assisted Chemical Vapour Deposition Using High-Voltage Electron Microscopy
• Large Area Chemical Vapour Deposition of Diamond Particles and Films Using Magneto-Microwave Plasma
• Cu/CaF_2/Diamond Metal-Insulator-Semiconductor Field-Effect Transistor Utilizing Self-Aligned Gate Fabrication Process
• High-Performance Diamond Metal-Semiconductor Field-Effect Transistor with 1 μm Gate Length
• Probability of Atomic or Molecular Oxygen Species in Silicon Silicon Dioxide
• Diffusion of Molecular and Atomic Oxygen in Silicon Oxide
• Observation of the interaction of vortices with dislocations in a Nb superconductor by a cryo-Lorentz EM
• High-Resolution Electron Microscopy of Modulated Structure in 20 K Superconducting Oxide Bi_2Sr_2CuO_y : Electrical Properties of Condensed Matter
• High Resolution Electron Microscopy of Intergrowth and Modulated Structure in 100 K High-T_c Superconductor Bi_2 (Sr,Ca) _4Cu_3O_y : Electrical Properties of Condensed Matter
• Structure Analysis of the Bi_2(Sr,Ca)_3Cu_2O_ Superconducting Crystal Based on the Computer Simulation of HRTEM Images : Condensed Matter
• Twins and Intergrowth Defects in High-T_c Bi-Sr-Ca-Cu-O Superconductor Examined by High-Resolution Electron Microscopy : Electrical Properties of Condensed Matter
• Possible Model of the Modulated Structure in High-T_c Superconductor in a Bi-Sr-Ca-Cu-O System Revealed by High-Resolution Electron Microscopy : Electrical Properties of Condensed Matter
• High-Resolution Electron Microscopy of Modulated Structure in the New High-T_c superconductors of the Bi-Sr-Ca-Cu-O System : Electrical Properties of Condensed Matter
• Fabrication of Adenosine Triphosphate-Molecule Recognition Chip by Means of Bioluminous Enzyme Luciferase : Cross-Disciplinary Areas
• Nonscalability of Alpha-Particle-Induced Charge Collection Area
• Reverse-Mode Single Ion Beam Induced Charge (R-mode SIBIC) Imaging for the Test of Total Dose Effects in n-ch Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
• {111} Facet Formation during Lateral Solid-Phase Epitaxy of Silicon
• Analysis of Interactions between Green Fluorescent Protein and Silicon Substrates Using Molecular Dynamics Simulations
• Large-Scale Atomistic Modeling of Thermally Grown SiO_2 on Si(111) Substrate
• Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
• Novel Interatomic Potential Energy Function for Si, O Mixed Systems
• Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE)
• Impact of Structural Strained Layer near SiO_2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown
• Dominant Role of Corner Holes in the Decomposition Process of Silicon Islands on Si(111) Surfaces
• Consideration on the Quantitativeness of Reflection High Energy Electron Diffraction Intensity as a Tool to Monitor the Coverage of the Si(111) Surface by 7×7 Domains
• High-Temperature Scanning Tunneling Microscopy (STM) Observation of Metastable Structures on Quenched Si (111) Surfaces
• TEM Observation of a Piled Structure of Si/Ga/Si with Ga Monolayer
• Influence of Near-Surface Defects in Si Induced by Reactive Ion Etching on the Electrical Properties of the Pt/n-Si Interface
• Estimation of Spatial Extent of a Defect Cluster in Si Induced by Single Ion lrradiation
• Single-Event Upset Test of Static Random Access Memory Using Single-Ion Microprobe
• Site Dependence of Soft Errors Induced by Single-Ion Hitting in 64 kbit Static Random Access Memory (SRAM)
• Low Temperature Synthesis of Extremely Dense and Vertically Aligned Single-Walled Carbon Nanotubes
• Si Island Formation on Domain Boundaries Induced by Ar Ion Irradiation on High-Temperature Si(111)-7 × 7 Dimer-Adatom-Stacking Fault Surfaces
• Electron Affinity and Surface Re-ordering of Homoepitaxial Diamond (100)
• Irradiation Damage Caused by Ion Milling in Bismuth-Based Superconductors
• Transmission Electron Microscopy Cross-Sectional Observation on Mechanically and Chemically Lapped Si (111) Surfaces
• RF Diamond Transistors : Current Status and Future Prospects
• Electric Properties of Metal/Diamond Interfaces Utilizing Hydrogen-Terminated Surfaces of Homoepitaxial Diamonds
• Nanoscale Modification of the Hydrogen-Terminated Diamond Surface Using Atomic Force Microscope
• Fabrication of Single Electron Transistors on Hydrogen-Terminated Diamond Surface Using Atomic Force Microscope
• High Resolution Transmission Electron Microscopy of Defects in High T_c Superconductor Ba_2YCu_3O_y
• Cation-Conductive Ceramics Examined by 1 MV HRTEM
• Profile-Imaging of Wavy Cleavage Surface of Bi_2Sr_2CaCu_2O_y by High-Resolution Transmission Electron Microscopy
• Surface Order Evaluation of the Heteroepitaxial Diamond Film Grown on an Inclined β-SiC(001)
• Soft X-ray Core-Level Photoemission Study of Boron Sites in Heavily Boron-Doped Diamond Films(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• Hole Confinement to CuO_2 Layers in High-T_c Cuprate Superconductors due to Crystal Potential
• Some Results Obtained by a Newly Constructed Ultra-High-Resolution 1300 kV Electron Microscope
• Preparation and Crystal Structures of Bi-Based Layered Oxides Including Fe
• T_c = 113 K Bi-Based Superconductor Prepared by Doping Fluorine
• Low-Temperature Electron Microscopy of a Bi_2(Sr, Ca)_3Cu_2O_x Superconductor
• A High Resolution Lattice Image of Nb_O_ by Means of a High Voltage Electron Microscope Newly Constructed
• A Structural Defect of Natural Magnetite Observed in an Electron Microscope Lattice Image
• Electrically Isolated Metal-Semiconductor Field Effect Transistors and Logic Circuits on Homoepitaxial Diamonds
• Investigation of Current-Voltage Characteristics of Oxide Region Induced by Atomic Force Microscope on Hydrogen-Terminated Diamond Surface
• RF Performance of High Transconductance and High-Channel-Mobility Surface-Channel Polycrystalline Diamond Metal-Insulator-Semiconductor Field-Effect Transistors
• Effect of Cl^- Ionic Solutions on Electrolyte-Solution-Gate Diamond Field-Effect Teansistors
• Microwave Performance of Diamond Field-Effect Transistors
• Anneal Behavior of Aluminum-Implanted Germanium
• Interface Reaction of SiO_2 and GaAs during High-Temperature Heat-Treatments
• Analysis of Atomic-Scale Structure of Microtwins in L-SPE Si by Modeling
• Solid State Reaction of Mo on Cubic and Hexagonal SiC
• Carrier Generation in Germanium Implanted with Aluminum at Room Temperature
• Positron Annihilation in Sintered and Powdered WO_3
• Direct Observation of Oxygen Atoms in a Tetragonal YBa_2Cu_3O_ High-T_c Superconductor by Means of Ultra-High-Resolution High Voltage Electron Microscopy
• High Frequency Performance of Diamond Field-Effect Transistor
• Semispiral Structure of Turbostratic Boron Nitride Formed under High Pressure and High Temperature
• Characterization of Hybridization on Diamond Solution-Gate Field-Effect Transistors for Detecting Single Mismatched Oligonucleotides
• High-Performance P-Channel Diamond Metal--Oxide--Semiconductor Field-Effect Transistors on H-Terminated (111) Surface
• Geometrical Relations of Various Modulated Structures in Bi-Sr-Ca-Cu-O Superconductiors and Related Compounds : Electrical Properties of Condensed Matter
• Point Defects in Nb_O_ Oxidized at 200℃
• High-Pressure Synthesis of Superconducting (Cu, C)-1212 Compound (Cu, C)Ba_2(Y, Ca)Cu_2O_z
• High-Pressure Synthesis and Electron Microscopic Study of 1212 Lead Cuprates (Pb, Cu)Sr_2(Y, Ca)Cu_2O_z
• Structure of a Twin Boundary in YBa_2Cu_3O_
• Application of Imaging Plates to High-Resolution High-Voltage Electron Microscopy
• Imaging Conditions for Resolving Oxygen Atoms in ZrO_2 by an Ultra-High-Resolution High-Voltage Electron Microscope
• Preparatiorn and Structure of Al(Sr, Ca)_2HoCu_2O_7 and AlSr_2(Ho, Ca)Cu_2O_7 Cuprates
• Initial Growth of Heteroepitaxial Diamond on Si(001) Substrates via β-SiC Buffer Layer
• Distribution of Oxygen Atoms in a YBa_2Cu_3O_ Superconductor Visualized by Ultra-High-Resolution Electron Microscopy
• Crystal growth of the high-TC superconductor in the Bi-Sr-Ca-Cu-O system.
• Diffuse Scattering and Crystal Structure in Hollandite-type Crystals

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