Impact of Structural Strained Layer near SiO_2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-07-30

著者

• OHDOMARI Iwao

  School of Science and Engineering, Waseda University

• Ohdomari Iwao

  School Of Science And Engineering Waseda University

• Eriguchi Koji

  Ulsi Process Technology Development Center Matsushita Electronics

• WATANABE Takanobu

  School of Science and Engineering, Waseda University

• Harada Yoshinao

  Ulsi Process Technology Development Center Matsushita Electronics Corporation

• Harada Yoshinao

  Ulsi Process Technology Development Center Matsushita Electronics Corp.

• Harada Yoshinao

  Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.

• NIWA Masaaki

  ULSI Process Technology Development Center, Matsushita Electronics Corp.

• Niwa Masaaki

  Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.

• Niwa Masaaki

  Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.

• Watanabe Takanobu

  School Of Science And Engineering Waseda University

• Nima Masaaki

  ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics corp.

• Eriguchi Koji

  ULSI Process Tech. Dev. Ctr., Matsushita Electronics

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