Dominant Role of Corner Holes in the Decomposition Process of Silicon Islands on Si(111) Surfaces
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概要
- 論文の詳細を見る
The decomposition process of silicon islands deposited on 7×7 reconstructed and "1×1" disordered areas of Si(111) surfaces was observed with an in situ scanning tunneling microscope (STM).We successfully monitored silicon islands on the 7×7 area gradually decomposing through the loss of a few adatoms with every STM scan.The smallest island just before the complete decomposition always has a corner hole configuration where Si adatoms are arranged in a ring-shaped formation.Corner holes are also observed for silicon islands deposited on the disordered "1×1" area.The corner hole is maintained even on the "1×1" area until the last moment before the complete decomposition of the silicon island.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1999-04-15
著者
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Ohdomari Iwao
School Of Science And Engineering Waseda University
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HOSHINO Tadatsugu
School of Science and Engineering, Waseda University
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Kawada Hiroki
School Of Science And Engineering Waseda University:kagami-memorial Laboratory For Materials Science
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Ishimaru Tetsuya
School Of Science And Engineering Waseda University:kagami-memorial Laboratory For Materials Science
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Ishimaru Tetsuya
School of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555
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Kawada Hiroki
School of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555
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Ohdomari Iwao
School of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555
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