Carrier Generation in Germanium Implanted with Aluminum at Room Temperature
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概要
- 論文の詳細を見る
Nearly intrinsic p-type germanium was implanted with aluminum ions of 10 keV at room temperature. Carrier distribution and the temperature dependences of (N_s)_<eff> and μ_<eff> of aluminum-implanted layers in the substrates were investigated. From the experimental results it was made clear that two kinds of acceptors were introduced in germanium by aluminum implantation; the one associated with vacancy and the other formed by substitutional aluminum atom. The acceptor associated with vacancy had a shallow ionization level as well as that associated with substitutional aluminum atom so that the conductivity of the implanted layer had scarecely any temperature dependence between 77 and 300 K.
- 社団法人応用物理学会の論文
- 1972-11-05
著者
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OHDOMARI Iwao
School of Science and Engineering, Waseda University
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Ohdomari Iwao
School Of Science And Engineering Waseda University
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ITOH Tadatsugu
School of Science and Engineering, Waseda University
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Itoh Tadatsugu
School Of Science And Engineering Waseda University
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