Analysis of Interactions between Green Fluorescent Protein and Silicon Substrates Using Molecular Dynamics Simulations
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-11-30
著者
-
OHDOMARI Iwao
School of Science and Engineering, Waseda University
-
大泊 巌
早稲田大学理工学術院
-
Ohdomari Iwao
School Of Science And Engineering Waseda University:kagami-memorial Laboratory For Materials Science
-
Ohdomari Iwao
School Of Science And Engineering Waseda University:kagami Memorial Laboratory For Materials Science
-
Watanabe T
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
-
HOSHINO Tadatsugu
Graduate School of Pharmaceutical Sciences, Chiba University
-
WATANABE Takanobu
School of Science and Engineering, Waseda University
-
NISHIYAMA Katsuhiko
School of Science and Engineering, Waseda University
関連論文
- Direct Crystallization and Characterization of Bi_3TiTaO_9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- A Novel Process for Fabrication of Gated Silicon Field Emitter Array Taking Advantage of Ion Bombardment Retarded Etching
- Si(111)-n×n構造についての新しい実験事実とその解釈
- 周期的な不純物原子配列を有する半導体の電気伝導シミュレーション(プロセス・デバイス・回路シミュレーション及び一般)
- ナノ開口基板を用いたシャペロニンGroELの1分子機能解析
- 1P088 ナノ開口を用いた弱い生体分子間相互作用の1分子検出(蛋白質 E) 計測・解析の方法論)
- Piezoelectric anomalies at the ferroelastic phase transitions of lead-free tungsten bronze ferroelectrics
- 周期的な不純物原子配列を有する半導体の電気伝導シミュレーション(プロセス・デバイス・回路シミュレーション及び一般)
- シングルイオン注入法を用いたナノスケール表面改質
- 25aP-5 ナノスケール一次元伝導体の伝導特性
- 24pYM^ / 24pYM-9 微細化電荷密度波の形成とその伝導特性
- 27a-YK-8 イオンビームによるCDWの一次元化とその伝導機構
- 歪Siナノワイヤトランジスタにおけるトランスコンダクタンスエンハンスメント(ゲートスタック構造の新展開(II),ゲート絶縁膜,容量膜,機能膜及びメモリ技術)
- 2908 Luciferase-Si基板間相互作用の分子動力学シミュレーション(OS-29B,OS-29 生体高分子の動力学シミュレーション)
- 生体分子-半導体表面間相互作用の分子動力学シミュレーション(S24-1 バイオ・ナノ流動ダイナミクス(1),S24 バイオ・ナノ流動ダイナミクス)
- Hybridization of Deoxyribonucleic Acid and Immobilization of Green Fluorescent Protein on Nanostructured Organosilane Templates
- Micropatterning Oligonucleotides on Single-Crystal Diamond Surface by Photolithography
- 4. 先端放電型マイクロ波プラズマCVDによる単層カーボンナノチューブ配向成長(プラズマプロセスによるカーボンナノチューブ配向成長の現状と課題)
- Electron Beam Lithography on Organosilane Self-Assembled Monolayer Resist
- D-4 Manufacturing Technology of High Resolution Probes for NDT
- Ferroelectric Property of a- /b-Axis- Oriented Epitaxial Sr_Bi_Ta_2O_9 Thin Films Grown by Metalorganic Chemical Vapor Deposition : Electrical Properties of Condensed Matter
- Epitaxial Yttria-stabilized Zirconia (YSZ) Film Deposited on Si(100) Substrate by YAG Laser
- Effect of Buffer Layer on Epitaxial Growth of YSZ Deposited on Si Substrate by Slower Q-switched 266nm YAG Laser
- Effect of Deuterium Anneal on SiO_2/Si(100) Interface Traps and Electron Spin Resonance Signals of Ultrathin SiO_2 Films
- Metalorganic Chemical Vapor Deposition of Epitaxial Perovskite SrIrO_3 Films on (100)SrTiO_3 Substrates
- Epitaxial Pt Films with Different Orientations Grown on (100)Si Substrates by RF Magnetron Sputtering
- Crystal Structure Analysis of Metalorganic Chemical Vapor Deposition-β-FeSi_2 Thin Film by X-ray Diffraction Measurement
- High-Resolution Electron Microscope Study of Silicon on Insulator Structure Grown by Lateral Solid Phase Epitaxy
- Structural Study of PtSi/(111)Si Interface with High-Resolution Electron Microscopy
- 5a-T-3 酸素吸着モデルで考えたSi(111)7x7超構造のTED解析
- 28pSL-7 Cooper pairの熱的安定化による原子核の安定化
- 29a-B-2 超伝導相転移の前駆状態を形成する高温磁気相転移
- Probability of Atomic or Molecular Oxygen Species in Silicon Silicon Dioxide
- Diffusion of Molecular and Atomic Oxygen in Silicon Oxide
- Structural and Electrical Properties of Polycrystalline Bi_Nd_xTi_3O_ Ferroelectric Thin Films with in-Plane c-Axis Orientations
- Charge-Compensative Ion Substitution of La^-Substituted Bismuth Titanate Thin Films for Enhancement of Remanent Polarization
- Spontaneous Polarization of Neodymium-Substituted Bi_4Ti_3O_ Estimated from Epitaxially Grown Thin Films with in-Plane c-Axis Orientations
- Electrical Properties of (Ca,Sr)Bi_4Ti_40_ Thin Films Fabricated Using a Chemical Solution Deposition Method
- Synthesis and Electrical Properties of Sr-and Nb-Cosubstituted Bi_Sr_xTi_NbO_ Polycrystalline Thin Films
- Fabrication of M^-Substituted and M^/V^-Cosubstituted Bismuth Titanate Thin Films [M = lanthanoid] by Chemical Solution Deposition Technique
- Fabrication of Adenosine Triphosphate-Molecule Recognition Chip by Means of Bioluminous Enzyme Luciferase : Cross-Disciplinary Areas
- Novel Process for High-Density Buried Nanopyramid Array Fabrication by Means of Dopant Ion Implantation and Wet Etching
- Nucleation and Growth of Cu Adsorbates on Hydrogen-Terminated Si(111) Surface in Solution
- Nonscalability of Alpha-Particle-Induced Charge Collection Area
- Reverse-Mode Single Ion Beam Induced Charge (R-mode SIBIC) Imaging for the Test of Total Dose Effects in n-ch Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
- {111} Facet Formation during Lateral Solid-Phase Epitaxy of Silicon
- Analysis of Interactions between Green Fluorescent Protein and Silicon Substrates Using Molecular Dynamics Simulations
- Large-Scale Atomistic Modeling of Thermally Grown SiO_2 on Si(111) Substrate
- Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
- Novel Interatomic Potential Energy Function for Si, O Mixed Systems
- Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE)
- 7a-E-9 イオンビームによる一次元化CDWダイナミクス
- Impact of Structural Strained Layer near SiO_2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown
- Dominant Role of Corner Holes in the Decomposition Process of Silicon Islands on Si(111) Surfaces
- Consideration on the Quantitativeness of Reflection High Energy Electron Diffraction Intensity as a Tool to Monitor the Coverage of the Si(111) Surface by 7×7 Domains
- High-Temperature Scanning Tunneling Microscopy (STM) Observation of Metastable Structures on Quenched Si (111) Surfaces
- これからの産学協働のあり方
- シリコンナノ構造配列の作製とバイオアプリケーション (特集 分子レベル制御による高機能表界面の構築)
- 学際融合研究と人材育成
- ナノテクノロジーの現状と課題(映像情報メディアにおけるナノテクノロジー)
- 第7回原子スケール制御表面界面・ナノ構造国際会議(ACSIN-7)報告
- ナノテクノロジーと化学
- ナノテクノロジーに日本再生を託そう
- 分子動力学法によるシリコン酸化膜の大規模モデリング
- Si結晶表面のナノスケール改質のためのシミュレーション--初期酸化およびイオン注入素過程の研究
- Influence of Secondary Electron Detection Efficiency on Controllability of Dopant Ion Number in Single Ion Implantation
- 27a-Z-1 中速イオン散乱分光を用いた3C-SiC(001)表面の元素固定
- Influence of Near-Surface Defects in Si Induced by Reactive Ion Etching on the Electrical Properties of the Pt/n-Si Interface
- Estimation of Spatial Extent of a Defect Cluster in Si Induced by Single Ion lrradiation
- Improvement of Focused Ion-Beam Optics in Single-Ion Implantation for Higher Aiming Precision of One-by-One Doping of Impurity Atoms into Nano-Scale Semiconductor Devices : Instrumentation, Measurement, and Fabrication Technology
- Hihg-Density Nanoetchpit-Array Fabrication on Si Surface Using Ultrathin SiO_2 Mask
- New Process for Si Nanopyramid Array(NPA)Fabrication by Ion-Beam Irradiation and Wet Etching
- Reduction of Fluctuation in Semiconductor Conductivity by One-by-One Ion Implantation of Dopant Atoms
- Single-Event Upset Test of Static Random Access Memory Using Single-Ion Microprobe
- Site Dependence of Soft Errors Induced by Single-Ion Hitting in 64 kbit Static Random Access Memory (SRAM)
- Low Temperature Synthesis of Extremely Dense and Vertically Aligned Single-Walled Carbon Nanotubes
- Si Island Formation on Domain Boundaries Induced by Ar Ion Irradiation on High-Temperature Si(111)-7 × 7 Dimer-Adatom-Stacking Fault Surfaces
- 13a-PS-2 Si(111)1x1-7x7表面構造相転移に及ぼす酸素の影響
- Si 表面酸素の除去
- 原子的尺度で見たシリサイド/シリコン界面の構造と性質--ショットキ-障壁の問題を中心として
- シングルイオン注入と電気化学反応を用いたウェーハスケールテクノロジー
- Anneal Behavior of Aluminum-Implanted Germanium
- Interface Reaction of SiO_2 and GaAs during High-Temperature Heat-Treatments
- Analysis of Atomic-Scale Structure of Microtwins in L-SPE Si by Modeling
- Solid State Reaction of Mo on Cubic and Hexagonal SiC
- Carrier Generation in Germanium Implanted with Aluminum at Room Temperature
- シングルイオン注入と電気化学反応を用いたウェハースケールテクノロジー
- 「シングルイオン注入法の実現と固体物性制御への応用」特別推進研究(平成五年〜八年度)(科学研究費補助金)
- 大学における研究室運営の一例(大学における実験系の研究室の活動について)
- シングルイオン注入技術
- サイエンスとテクノロジーの協同のための一提案
- 単一原子ドーピング法と離散的ドーパントデバイス評価
- 711 局所変形角と相対変位を測定可能な構造ヘルスモニタリング用層間変位センサの開発(OS7-3 非破壊評価と構造モニタリング)
- ナノテクノロジーと化学(ヘッドライン:化学教育講習会-今日と明日を結ぶ化学)
- シングルイオン照射とその応用
- シミュレーションと洞察
- 金属シリサイド-シリコン界面の微視的構造と電気的性質
- Auイオン照射によるSi表面改質素過程のリアルタイムSTM観察
- 構造ヘルスモニタリングのための５自由度層間変位センサの開発
- 歪Siナノワイヤトランジスタにおけるトランスコンダクタンスエンハンスメント