Analysis of Atomic-Scale Structure of Microtwins in L-SPE Si by Modeling
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概要
- 論文の詳細を見る
Atomic-scale structure of a microtwin formed at the lateral solid phase epitaxial (L-SPE) region in a silicon-on-insulator (SOI) structure is analyzed using a plastic ball-and-spoke model. The microtwin is observed by means of high-resolution transmission electron microscopy (HR-TEM) to distribute not throughout the L-SPE film, but only in the region adjacent to the SiO_2 substrate. Strain energy of each atom around the microtwin is calculated with Keating-type potential. The results show that strain energy of the atoms around the further edge of the planar twin boundaries (incoherent twin boundary) amounts to several hundred meV per atom. Higher strain energy must be introduced to reduce as much as possible the dangling bond density near the incoherent twin boundary, by forming a few pairs of 5- and 7-membered rings. In addition, a phase shift in the matrix region causes a wider distribution of strain energy.
- 社団法人応用物理学会の論文
- 1992-06-15
著者
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OHDOMARI Iwao
School of Science and Engineering, Waseda University
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Ohdomari Iwao
School Of Science And Engineering Waseda University
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UENO Tomo
School of Science and Engineering, Waseda University
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Ueno T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Ueno Tomo
School Of Science And Engineering Waseda University
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