Preparation of a-Si_<1-x>N_x:H Film Using N_2 Microwave Afterglow Chemical Vapor Deposition Method
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-12-15
著者
-
Shimada Toshikazu
Electronics Research Laboratory Nissan Motor Co. Ltd.
-
Kurihara Koji
Faculty Of Technology Tokyo University Of Agricuture And Technology
-
UENO Tomo
Faculty of Technology, Tokyo University of Agriculture and Technology
-
NAGAYOSHI Hiroshi
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
-
WONG Chee
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
-
NOGUCHI Haruya
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
-
UENO Tomo
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
-
KAMISAKO Koichi
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
-
KUROIWA Koichi
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
-
SHIMADA Toshikazu
Central Research Laboratory, Hitachi Ltd.
-
TARUI Yasuo
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
-
NAGAYOSHI Hiroshi
Faculty of Technology, Tokyo University of Agriculture and Technology
-
Wong Chee
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
-
Ueno T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
-
Ueno Tomo
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
-
Tarui Y
National Institute Of Advanced Industrial Science And Technology
-
Tarui Yasuo
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
-
Kamisako K
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
-
Kuroiwa K
Faculty Of Technology Tokyo University Of Agricuture And Technology
-
Noguchi H
Sanyo Electric Co. Ltd. Gifu Jpn
-
TARUI Yasuo
National Institute of Advanced Industrial science and Technology
-
Shimada T
Presto Japan Science And Technology Corporation (jst) And Department Of Chemistry The University Of
-
Kamisako Koichi
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
-
Nagayoshi H
Faculty Of Technology Tokyo University Of Agriculture And Technology
-
Shimada Toshikazu
Central Research Laboratory
関連論文
- Effect of Deuterium Anneal on SiO_2/Si(100) Interface Traps and Electron Spin Resonance Signals of Ultrathin SiO_2 Films
- High-Resolution Electron Microscope Study of Silicon on Insulator Structure Grown by Lateral Solid Phase Epitaxy
- Preparation of a-Si_N_x:H Film Using N_2 Microwave Afterglow Chemical Vapor Deposition Method
- Generation Mechanism of Tensile Stress in a-Si_N_x Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
- Residual Stress of a-Si_N_x:H Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
- High-Intensity Vacuum Ultraviolet Light Source in Windowless Photochemical Vapor Deposition Reactor and Its Application to a-Si:H Deposition
- Zero-Field Magnetic Amplifying Magnetooptical System Applied to Next Generation "iD PHOTO" System
- Effect of Hydrogen-Radical Annealing for SiO_2 Passivation
- {111} Facet Formation during Lateral Solid-Phase Epitaxy of Silicon
- Effects of Electrode Geometry on Breakdown Voltage of a Single-Gap Pseudospark Discharge
- Growth Style of Bi_4Ti_3O_ Thin Films on CeO_2/Ce_Zr_O_2 Buffered Si Substrates
- Characteristics of a Metal/Ferroelectric/Insulator/Semiconductor Structure Using an Ultrathin Nitrided Oxide Film as the Buffer Layer
- SiN_x:H/SiO_2 Double-Layer Passivation With Hydrogen-Radical Annealing For Solar Cells
- Modification Effect of a-Si_ N_x:H Surface by Hydrogen Radicals
- Optical Performance of KrF Excimer Laser Lithography with Phase Shift Mask for Fabrication of 0.15 μm and Below
- Novel Process for Direct Delineation of Spin on Glass (SOG)
- Fabrication and Electrical Characteristics of a Trench-Type Metal-Ferroelectric-Metal-Insulator-Semiconductor Field Effect Transistor
- Epitaxial Growth of Bi_4Ti_3O_/CeO_2/Ce_Zr_O_2 and Bi_4Ti_3O_/SrTiO_3/Ce_Zr_O_2 Thin Films on Si and Its Application to Metal-Ferroelectric-Insulator-Semiconductor Diodes
- Effects of Electrode Geometry and Gas Pressure on Breakdown Voltage of a Pseudospark Discharge
- Crystal and Electrical Characterizations of Oriented Yttria-Stabilized Zirconia Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistor
- Thermal Properties of Various Ta Precursors Used in Chemical Vapor Deposition of Tantalum Pentoxide
- Interaction of PbTiO_3 Films with Si Substrate ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Effect of Atomic and Molecular Hydrogen Irradiation on Ge Surface Segregation during Si Molecular Beam Epitaxy
- c-Axis-Oriented Pb(Zr, Ti)O_3 Thin Films Prepared by Digital Metalorganic Chemical Vapor Deposition Method
- Preparation of Tetragonal Perovskite Single Phase PbTiO_3 Film Using an Improved Metal-Organic Chemical Vapor Deposition Method Alternately Introdueing Pb and Ti Precursors
- Microstructure of Visible Light Emitting Porous Silicon
- Persistent Spectral Hole-Burning in Semi-Crystalline Matrices Doped with Tetraphenylporphine
- Fine Structure of Porous Si with Visible Photoluminescence
- Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
- Reduction of Gap State Density in a-SiGe:H Alloys
- Tantalum Oxide Films Formed by UV Photo-CVD Using Ozone and TaCl_5
- Mobility-Lifetime Product in Hydrogenated Amorphous Silicon
- Gap States in a-SiGe:H Examined by the Constant Photocurrent Method
- Fast and Efficient Photon-Gated Burning of Persistent Spectral Holes in Donor-Acceptor Electron Transfer Systems
- Photochemical Hole Burning in Highly Doped TPP/PMMA Systems. Energy Migration and Stabilization of Burnt Holes for Subsequent Hole-Burnings : FUTURE TECHNOLOGY
- Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators
- Medium-Range Order of Amorphous Silicon Germanium Alloys : Small-Angle X-Ray Scattering Study
- Influence of Deposition Conditions on Properties of a-SiGe:H Prepared by Microwave-Excited Plasma CVD : Condensed Matter
- Direct Observation of a-Si:H/a-Si_C_x:H Multilayers and Their Electrical Properties : Surfaces, Interfaces and Films
- Microwave-Excited Plasma CVD of a-Si:H Films Utilizing a Hydrogen Plasma Stream or by Direct Excitation of Silane
- Chemical Vapor Deposition of a-SiGe:H Films Utilizing a Microwave-Excited Plasma
- Chemical Vapor Deposition of a-Si:H Films Utilizing a Microwave Excited Ar Plasma Stream
- Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
- High-Rate Selective Etching of a-Si:H Using Hydrogen Radicals
- Influence of Ce Content on Crystal and Electrical Properties of Ce_xZr_0_2 Thin Films on Si(100) Substrates
- Infrared Spectra of Amorphous Silicon-Fluorine Alloys Prepared by Sputtering in Fluorosilane-Argon Gas Mixture
- Photo-Process of Tantalum Oxide Films and Their Characteristics : Surfaces, Interfaces and Films
- Amorphous Silicon Thin-Film Transistors Employing Photoprocessed Tantalum Oxide Films as Gate Insulators
- Photoassisted Electrochemical Deposition of Copper from a Bathocuproin Complex
- Growth of MmSb Thin Films on CdTe Substrates by Hot-Wall Epitaxy
- Preparation of SrBi_2Ta_2O_9 Film at Low Temperatures and Fabrication of a Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Using Al/SrBi_2Ta_2O_9/CeO_2/Si(100) Structures
- Initial Stage and Growth Process of Ceria, Yttria-Stabilized-Zirconia and Ceria-Zirconia Mixture Thin Films on Si(100) Surfaces
- Effect of Reducing Process Temperature for Preparing SrBi_2Ta_20_9 in a Metal/Ferroelectric/ Semiconductor Structure
- Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Structure Using SrBi_2Ta_2O_9 as the Ferroelectric Material
- Crystal and Electrical Characterizations of Epitaxial Ce_XZr_O_2 Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor
- Characterization of Metal/Ferroelectric/Insulator/Semiconductor Structure with CeO_2 Buffer Layer
- 励起水素原子の発生とその電子材料薄膜作製への応用〔英文〕 (電子材料技術の新展開)
- Contributions of Silicon-Hydride Radicals to Hydrogenated Amorphous Silicon Film Formation in Windowless Photochemical Vapor Deposition System
- 0.13 μm Pattern Delineation Using KrF Excimer Laser Light
- Preparation of Perovskite Oriented PbZr_xTi_O_3 Films with Suppressed Vapor Phase Reactions by a Digital Chemical Vapor Deposition Method
- Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with a CeO_2 Buffer Layer ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Optical Characterization of Undoped a-Si:H Prepared by Photo-CVD and GD Techniques
- Etching and Surface Modification of GaAs by Hydrogen Radicals Generated by Hydrogen Microwave Afterglow Method
- Carrier Injection into SiO_2 from Si Surface Driven to Avalanche Breakdown by a Linear Ramp Pulse, and Trapping, Distribution and Thermal Annealing of Injected Holes in SiO_2
- Injection, Trapping and Release from SiO_2 of Photo-Generated Hole Charge for an Erasable Non-Volatile Optical Memory
- Analysis of Atomic-Scale Structure of Microtwins in L-SPE Si by Modeling
- Radiative Transition with Visible Light in Electrochemical Anodized Polycrystalline Silicon
- Characterization of CVD-TiN Films Prepared with Metalorganic Source
- Stopping Cross-Sections of Rare Gases in Amorphous Silicon for MeV Energy Helium Ions
- Characterization of Pb(Zr,Ti)O_3 Thin Films on Si Substrates Using MgO Intermediate Layer for Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Devices
- Fabrication of c-Axis Oriented Pb(Zr, Ti)O_3 Thin Films on Si(100) Substrates Using MgO Intermediate Layer
- Bisazidobiphenyls/Novolak Resin Negative Resist Systems for i-Line Phase-Shifting Lithography
- Acid-Catalyzed Reactions of Tetrahydropyranyl-Protected Polyvinylphenol in a Novolak-Resin-Based Positive Resist
- Deposition of Low Hydrogen Content Silicon Nitride Film Using High-Intensity Vacuum Ultraviolet Light Source in Windowless Photochemical Vapor Deposition Reactor
- Determination of Acid Diffusiomin Chemical Amplification Positive Deep-UV Resists : Resist and Processes
- Dissolution Inhibition of Phenolic Resist by Diazonaphthoquinone: Effect of Polymer Structure : Resist and Processes
- Determination of Acid Diffusion in Chemical Amplification Positive Deep-UV Resists
- Dissolution Inhibition of Phenolic Resins by Diazonaphthoquinone : Effect of Polymer Structure
- Negative Resist for i-Line Lithography Utilizing Acid Catalyzed Silanol-Condensation Reaction : Resist Material and Process
- Molecular Beam Epitaxy of SnSe_2 : Chemistry and Electronic Properties of Interfaces
- RHEED Intensity Oscillation during Epitaxial Growth of Layered Materials
- Control of Optical Gap in a-Si_xC_: H Alloy Films Produced by Reactive Sputtering Method : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
- Doping-Induced Defects in P-Doped Photo-CVD a-Si:H
- Characterization of Photo-CVD a-Si:H Films by Thin-Film Transistor Structure
- GaAs_P_x Light Emitting Diodes Produced by Zn Ion Implantation. : I. Dose Dependence of Properties of Implanted Diodes
- Negative Resist for i-Line Lithography Utilizing Acid Catalyzed Silanol-Condensation Reaction
- Dissolution Behavior of Novolak/Dissolution Inhibitor Resist Systems in an Aqueous Base Developer : Resist Material and Process
- Characterization of μc-Si:H Prepared by Photo-Chemical Vapor Deposition
- On the Phase Transition-Like Structure Change of Disordered Lattice State of GaP (Selected Topics in Semiconductor Physics) -- (Impurity and Disordered States)
- GaAs_P_x Light Emitting Diodes Produced by Zn Ion Implantation. : II. Photoluminescence of p-Type Layers Formed by Ion Implantation and Diffusion
- XPS Determination of Amount of Incorporated Rare Gas in Amorphous Silicon Films Produced with Reactive Sputtering Method
- Observation of Si-2p Level Shift in Hydrogenated Amorphous Silicon by X-Ray Photoelectron Spectroscopy
- Phosphorus Doping Properties of Hydrogenated Amorphous Silicon Prepared by Mercury Sensitized Photo-CVD : Condensed Matter