Etching and Surface Modification of GaAs by Hydrogen Radicals Generated by Hydrogen Microwave Afterglow Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-04-01
著者
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Yamamoto Y
College Of Engineering Hosei University
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Kurihara Koji
Faculty Of Technology Tokyo University Of Agricuture And Technology
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Yamamoto Yuichi
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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Yamamoto Y
Nippon Steel Corp. Kawasaki Jpn
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Yamamoto Y
Nara Inst. Sci. And Technol. Nara Jpn
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NAGAYOSHI Hiroshi
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
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KAMISAKO Koichi
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agric
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NAGAYOSHI Hiroshi
Faculty of Technology, Tokyo University of Agriculture and Technology
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Yamamoto Yoshitugu
Department Of Chemistry For Materials Faculty Of Engineering Mie University
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Kamisako K
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Kuroiwa K
Faculty Of Technology Tokyo University Of Agricuture And Technology
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Kamisako Koichi
Division Of Electronic And Information Engineering Faculty Of Technology Tokyo University Of Agricul
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Nagayoshi H
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Yamamoto Y
Material Science Japan Advanced Institute Of Science And Technology
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