Phosphorus Doping Properties of Hydrogenated Amorphous Silicon Prepared by Mercury Sensitized Photo-CVD : Condensed Matter
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概要
- 論文の詳細を見る
A doping-induced defect creation of phosphorus-doped mercury-sensitized photo-CVD amorphous silicon is investigated by photoluminescence and the isothermal capacitance transient spectroscopy technique. Two kinds of silicon dangling bonds, i.e., the isolated dangling bound and the dangling bond coupled with a charged dopant have been observed. Their concentration dependence on the gas-phase doping ratio is different from those reported for glow discharge a-Si:H films. The isolated one increases as a square root of the gas-phase doping ratio, while the coupled dangling bond shows linear dependence on the ratio. A possible origin of the difference is discussed in terms of surface reaction.
- 社団法人応用物理学会の論文
- 1988-11-20
著者
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Suzuki Kazuhiko
Department of Veterinary Pathology, Graduate School of Agricultural and Life Sciences, The Universit
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Suzuki K
Ntt Transmission Systems Laboratories Lightwave Communications Laboratory
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Suzuki K
Assoc. Super‐advanced Electronics Technol. Kanagawa Jpn
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Suzuki K
Department Of Information And Communication Technology Tokai University
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Tarui Y
National Institute Of Advanced Industrial Science And Technology
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Tarui Yasuo
Department Of Electric Engineering Tokyo University Of Agriculture & Technology
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Kuroiwa K
Faculty Of Technology Tokyo University Of Agricuture And Technology
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TARUI Yasuo
National Institute of Advanced Industrial science and Technology
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Kuroiwa Koichi
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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Suzuki Kazuhiko
Department Of Electrical Engineering Hokkaido Institute Of Technology
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