Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs

スポンサーリンク

概要

• 論文の詳細を見る
• 1997-09-16

著者

• Suzuki K

  School Of Science And Engineering Waseda University:kagami Memorial Laboratory For Materials Science

• Suzuki Kenji

  Institute For Materials Research Laboratory Tohoku University

• OHKUBO Satoshi

  Fujitsu Laboratories Ltd.

• SUZUKI Kunihiro

  Fujitsu Laboratories Ltd.

• Suzuki K

  Central Research Laboratory Alps Electric Co. Ltd.

• Suzuki Kenshu

  Division Of Public Health Department Of Social Medicine Nihon University School Of Medicine

• AOYAMA Takahiro

  Daihen Co.

• Suzuki K

  Ntt Transmission Systems Laboratories Lightwave Communications Laboratory

• Aoyama T

  Hitachi Ltd. Ibaraki Jpn

• AOYAMA Takayuki

  Fujitsu Laboratories Lid.

• Suzuki K

  Assoc. Super‐advanced Electronics Technol. Kanagawa Jpn

• TASHIRO Hiroko

  Fujitsu Laboratories Ltd.

• TADA Yoko

  Fujitsu Laboratories Ltd.

• HORIUCHI Kei

  Fujitsu Laboratories Ltd.

• Suzuki K

  Department Of Information And Communication Technology Tokai University

• Tada Y

  Fujitsu Laboratories Ltd.

• Horiuchi K

  Fujitsu Laboratories Ltd.

• Horiuchi Kei

  Fujitsu Laboratories

• Ohkubo Shuichi

  Ulsi Technology Laboratory Fujitsu Laboratories Ltd.

• Tashiro H

  Research And Development Center Ricoh Company Ltd.

• Suzuki K

  東京大学大学院農学生命科学研究科獣医病理学研究室

• Tashiro Hideo

  Riken

• Suzuki Kunihiro

  Fujitsu Laboratories Limited., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

関連論文

• Free Surface Potential Flow around Multi-Hulls in Shallow Water Using a Potential Based Panel Method
• (4)3次元WIGに関する数値解析的研究 : 平成5年秋季講演論文概要
• Flat and Lateral High-T_c Superconducting Junctions Applied to Millimeter-Wave Mixer (Special Issue on Toward Digital and Analog Applications of Superconductors)
• Formation of Nanocrystalline Structures by Crystallization of Amorphous Fe-M-B (M=IVa to VIa Group Metal) Alloys
• X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si(100) Formed in Chemical Treatment
• New Scheme of Electrostatic Discharge Circuit Simulations Using Protection Device Model with Generated-Hole-Dependent Base Resistance
• High Power Er^-Doped Fiber Amplifier Pumped by 1.48 μm Laser Diodes
• High-Resolution Electron Microscopy of Extended Defects in Wurtzite Crystals
• High Tilt Angle Ion Implantation into Polycrystalline Si Gates
• Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
• Boron Penetration Enhanced by Gate Ion Implantation Damage in PMOSFETs
• Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
• Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
• Boron Diffusion in Nitrided-Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
• Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
• Sb Multiple Ion Implanted Channel for Low V_, Deep Submicron SOI-pMOSFETs
• Thermal Budget for Fabricating a Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
• Vth Rolloff Free Sub 0.1μm SOI MOSFETs Using Counter Doping into a Uniformly and Heavily Doped Channel Region
• Thermal Budget for Fabricating A Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
• Superconductivity of ZrRuP
• Electrical Conductivity of Nickel Phosphides
• Metal Oxide semiconductor Field Effect Transistor (MOSFET) Model Based on a Physical High-Field Carrier-Velocity Model
• X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect
• Ultrahigh-Vacuum Electron Cyclotron Resonance-Plasma Chemical-Vapor-Deposited SiN_x Films for X-Ray Lithography Mask Membrane : As-Deposited Properties and Radiation Stability
• Electron and Hole Proximity Effects in the InAs/AlSb/GaSb System
• Optically Detected Cyclotron Resonance by Multichannel Spectroscopy
• High-Quality, High-Rate SiO_2 and SiN Films Formed by 400 kHz Bias Electron Cyclotron Resonance-Chemical Vapor Deposition
• Electrical Properties of Regrowth ZnSe Homointerfaces Formed by Molecular Beam Epitaxy
• Electrical Properties of ZnSe/ZnSe Homointerfaces Formed by MBE Regrowth Process
• Characterization of Epitaxial ZnSe/GaAs(100) Interface Properties and Their Control by (HF+Se)-Pretreatment
• Characterization and Control of MBE-ZnSe/GaAs(100) Substrate Interface and Regrown ZnSe/ZnSe Homointerface
• Microoptical Two-Dimensional Devices for the Optical Memory Head of an Ultrahigh Data Transfer Rate and Density Sytem Using a Vertical Cavity Surface Emitting Laser (VCSEL) Array
• Mask Error Factor in Proximity X-Ray Lithography
• Determination of the Facet Index in Area Selective Epitaxy of GaAs
• Fabrication of Micro-Pyramidal Probe Array with Aperture for Near-Field Optical Memory Applications
• Optimum Phase Condition for Low-Contrast X-Ray Masks
• Selective Growth of GaAs on GaAs (111)B Substrates by Migration-Enhanced Epitaxy
• Determination of the Facet Index in Area Selective Epitaxy of GaAs
• Second-Order Piezoresistance Coefficients of p-Type Silicon
• Advanced SOI Devices Using CMP and Wafer Bonding
• Relationship between Overwrite Characteristics and Linear Velocity in Mark Edge Recording with Phase-Change Media
• Improvement in Jitter Characteristics in Mark Edge Recording for Phase Change Media
• X-Ray Photoelectron Spectroscopy Using A Focused 300 μm-Diameter X-Ray Beam
• Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
• X-Ray Photoelectron Spectroscopy of Micrometer-Size Surface Area Using Synchrotron Radiation
• Medium-Range Order of Amorphous Silicon Germanium Alloys : Small-Angle X-Ray Scattering Study
• Chemical Vapor Deposition of a-Si:H Films Utilizing a Microwave Excited Ar Plasma Stream
• Growth and Stability of H_2-Phthalocyanine Thin Films on MoS_2 Surfaces Studied by Means of Low-Energy Electron Transmission Spectroscopy
• Growth of Pb-Phthalocyanine Thin Films on MoS_2 Surfaces Studied by Means of Low-Energy Electron Transmission Spectroscopy
• 1-4 Application of Micro-Genetic Algorithm (μGA) to the Optimal Design of Lifting Bodies
• Effect of Ar + O_2 Plasma Etching on Microwave Characteristics of YBa_2Cu_3O_ Based Resonators
• Microwave Properties of Y_1Ba_2Cu_3O_ Step-Edge Josephson Junction Series Arrays
• Characteristics of YBCO Josephson Junction Prepared by a Focused Ion Beam Technique
• X-Band Mixing Performance of Y_1Ba_2Cu_3O_ Step-Edge Junction
• I-V Characteristic of YBCO Step-Edge Josephson Junction (Special Section on Superconducting Devices)
• Effects of Excited Species in Electron Cyclotron Resonance Plasma on SiN Film Resistivity
• High-Density Layer at the SiO_2/Si Interface Observed by Difference X-Ray Reflectivity
• High-Accuracy X-ray Reflectivity Study of Native Oxide Formed in Chemical Treatment
• 非突出型船首バルブによる漁船船型の改良
• Fabrication of Epitaxial Diamond Thin Film on Iridium
• Epitaxial Growth of Diamond on Iridium
• Effects of Atomic Arrangement at Tip Apex and Tip-Sample Distance on Atomic Force Microscopy Images: A Simulation Study
• Age-related Change in Relationship between White Blood Cell Count and Some Features of the Metabolic Syndrome
• Association of Lifestyle with Serum Lipid Levels : a Study of Middle-Aged Japanese Men
• Body Mass Index as a Measure of Health Care for Japanese Male Office Workers
• The Incidence of Hyperuricemia and Correlated Factors in Middle-Ages Japanese Men
• Associations of Body Mass Index and Percentage Body Fat by Bioelectrical Impedance Analysis with Cardiovascular Risk Factors in Japanese Male Office Workers
• Relation of Body Weight Change to Changes in Atherogenic Traits, A Study of Middle-Aged Japanese Obese Male Office Workers
• Effects of Coffee Consumption against the Development of Liver Dysfunction:A4-Year Follow-Up Study of Middle-Aged Japanese Male Office Workers
• Lifestyle and the Development of Dyslipidemia : a 4-year Follow-up Study of Middle-aged Japanese Male Office Workers
• Serum Uric Acid : Correlation with Biological, Clinical and Behavioral Factors in Japanese Men
• Risk Factors for the Incidence of Aortic Stiffness by Serial Aortic Pulse Wave Velocity Measurement in Middle-aged Japanese men
• (2) 自由表面条件の非線形性を考慮したパネル法による非揚力体/揚力体解析 : 平成10年春季講演論文概要
• Microscopic X-ray Photoelectron Spectroscopy Using a Wolter Type X-ray Mirror
• High Activation of Ga at Low Temperatures
• Mechanism of Radiation Damage in SiO_2/Si Induced by vuv Photons : Beam-Induced Physics and Chemistry
• Mechanism of Radiation Damage in SiO_2/Si Induced by vuv Photons
• High-Speed and Low-Power n^+-p^+ Double-Gate SOI CMOS
• Effects of Applied Magnetic Fields on Silicon Oxide Films Formed by Microwave Plasma CVD : Nuclear Science, Plasmas and Electric Discharges
• Validity of the Conventional Indirect Methods Including Friedewald Method for Determining Serum Low-Density Lipoprotein Cholesterol Level: Comparison with the Direct Homogeneous Enzymatic Analysis
• Impact of Current Gain Increment Effect on Alpha Particle Induced Soft Errors in SOI DRAMs
• Theoretical Study of Alpha-Particle-Induced Soft Errors in Submicron SOI SRAM (Special Issue on ULSI Memory Technology)
• Reactive Ion Etching of Sputtered PbZr_Ti_xO_3 Thin Films
• Simulation of Atomic Force Microscopy Image Variations along the Surface Normal:Presence of Possible Resolution Limit in the Attractive Force Range
• Impact of Nitrogen Profile in Gate Oxynitride on Complementary Metal Oxide Semiconductor Characteristics
• Impact of Nitrogen Profile in Gate Oxynitride on CMOS Characteristics
• Suppression of Hot Carrier Degradation in LDD n-MOSFETs with Gate N_2O-Nitrided O_3-Oxide
• Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO_2 Grown on Si : Beam-Induced Physics and Chemistry
• Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO_2 Grown on Si
• 非線形計画法による船型設計の基礎的研究-3-船型の平滑化を考慮した極小造波抵抗問題〔含 討論〕
• 非線形計画法による船型設計の基礎的研究-2-低速造波理論の応用および水槽試験による検証〔含 討論〕
• Effects of GaAs Surface Pretreatment and Post-Growth Annealing on Interface Properties of MBE-ZnSe/GaAs(Sub.) System
• Application of Micro-Genetic Algorithm (μGA) to the Optimal Design of Lifting Bodies
• Resonant Directional Excitation of Helicon Waves by a Helical Antenna
• Hot Spots and Electron Heating Processes in a Helicon-Wave Excited Plasma
• Soft Magnetic Properties of bcc Fe-M-B-Cu (M=Ti, Nb or Ta) Alloys with Nanoscale Grain Size
• A High-Speed Remote Procedure Call Based on Adaptive Data Representation Conversion
• A Design Method of Distributed Telecommunication System Based on the ODP Viewpoint Approach (Special Issue on Distributed Architecture for Next Generation Communication Networks)
• (4)浮体模型まわりの自由表面流に及ぼす表面張力の影響に関する研究 : 平成8年秋季講演論文概要
• (12)サーフェイスパネル法によるセーリングヨットに働く流体力の計算 : 平成7年秋季講演論文概要

もっと見る 閉じる

スポンサーリンク