Horiuchi K | Fujitsu Laboratories Ltd.

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概要

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著作論文

Suppression of Transient Enhanced Diffusion by Local-Oxidation-Silicon-Induced Stress
Suppression of Transient Enhanced Diffusion by LOCOS Induced Stress
Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
Boron Diffusion in Nitrided-Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
Sub-100-nm Device Fabrication using Proximity X-Ray Lithography at Five Levels
Patterning Yield of Sub-100-nm Holes Limited by Fluctuation of Exposure and Development Reactions in Synchrotron Radiation Lithography Using Biased Mask Patterns
Lithographic Performance of a Chemically Amplified Resist Developed for Synchrotron Radiation Lithography in the Sub-100-nm Region
High-Performance X-Ray Mask Fabrication Using TaGeN Absorber and Dummy Pattern Method for Sub-100nm Proximity X-Ray Lithography : Instrumentation, Measurement, and Fabrication Technology
Atomic Step Structure on Vicnal H/Si(111) Surface Formed by Hot Water Immersion
Boron Diffusion in SiO_2 Involving High-Concentration Effects
Boron Diffusion in SiO_2 Involving High-Concentration Effects
Evaluation of Photoemitted Current from SiO_2 Film on Silicon During Synchrotron Radiation Irradiation
Synchrotron Radiation-Assisted Silicon Film Growth by Irradiation Parallel to the Substrate

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