Suzuki Kunihiro | Fujitsu Laboratories Limited., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

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著作論文

Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
Boron Penetration Enhanced by Gate Ion Implantation Damage in PMOSFETs
Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
Boron Diffusion in Nitrided-Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
Sb Multiple Ion Implanted Channel for Low V_, Deep Submicron SOI-pMOSFETs
Vth Rolloff Free Sub 0.1μm SOI MOSFETs Using Counter Doping into a Uniformly and Heavily Doped Channel Region
Thermal Budget for Fabricating A Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
Advanced SOI Devices Using CMP and Wafer Bonding
High-Speed and Low-Power n^+-p^+ Double-Gate SOI CMOS
Impact of Current Gain Increment Effect on Alpha Particle Induced Soft Errors in SOI DRAMs
Theoretical Study of Alpha-Particle-Induced Soft Errors in Submicron SOI SRAM (Special Issue on ULSI Memory Technology)
Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors
New Scheme of Electrostatic Discharge Circuit Simulations Using Protection Device Model with Generated-Hole-Dependent Base Resistance
Resistivity of Heavily Doped Polycrystalline Silicon Subjected to Furnace Annealing
Threshold Voltage Instability of 45-nm-node Poly-Si-or FUSI-Gated SRAM Transistors Caused by Dopant Lateral Diffusion in Poly-Si
Analytical Threshold Voltage Model for Double-Gate Schottky Source/Drain Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
High Tilt Angle Ion Implantation into Polycrystalline Si Gates
Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Model Based on a Physical High-Field Carrier-Velocity Model
Quasi Crystal Lindhard–Scharff–Schiott Theory and Database for Ion Implantation Profiles in Si1-xGex Substrate Based on the Theory
Thermal Budget for Fabricating a Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
Diffusion Coefficient of As and P in HfO2
Simplified Analytical Model of Extended Second-Order Lindhard–Scharff–Schiott Theory
Extended Lindhard–Scharf–Schiott Theory for Ion Implantation Profiles Expressed with Pearson Function
Diffusion Coefficient of As and P in HfO2

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