Simplified Analytical Model of Extended Second-Order Lindhard–Scharff–Schiott Theory
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概要
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The derivation of second-order extended Lindhard–Scharff–Schiott theory (E2LSS) has shown that it is possible to predict accurate ion implantation moment parameters for a projected range of $R_{\text{p}}$, a straggling parameter $\Delta R_{\text{p}}$, and a lateral straggling parameter $\Delta R_{\text{pt}}$. Starting from E2LSS theory, we divided the energy region and introduced the ratio $r_{\text{s}}$ of the nuclear stopping power $S_{\text{n}}$ to the total stopping power in each energy region, related $S_{\text{n}}$ to energy straggling, and succeeded in obtaining a simplified analytical model. We showed that the range and the ratio $r_{\text{s}}$ have a universal dependence on the energy, normalized with respect to the reference energy $E_{1}$ where $S_{\text{n}}$ equals the electron stopping power at that energy. The simplified model can be applied to any combination of ion and substrate atoms, similarly to E2LSS. The simplified model reproduces E2LSS over a wide range of ion implantation conditions and can be used to generate Gaussian profiles easily and obtain physical intuition for ion implantation profiles.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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Suzuki Kunihiro
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Suzuki Kunihiro
Fujitsu Laboratories Limited., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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