Extended Lindhard–Scharf–Schiott Theory for Ion Implantation Profiles Expressed with Pearson Function
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概要
- 論文の詳細を見る
Ion implantation profiles are expressed by the Pearson function with first, second, third, and fourth moment parameters of $R_{\text{p}}$, $\Delta R_{\text{p}}$, $\gamma$, and $\beta$. We derived an analytical model for these profile moments by solving a Lindhard–Scharf–Schiott (LSS) integration equation using perturbation approximation. This analytical model reproduces Monte Carlo data that were well calibrated to reproduce a vast experimental database. The extended LSS theory is vital for instantaneously predicting ion implantation profiles with any combination of incident ions and substrate atoms including their energy dependence.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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Suzuki Kunihiro
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Suzuki Kunihiro
Fujitsu Laboratories Limited., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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