Theoretical Study of Alpha-Particle-Induced Soft Errors in Submicron SOI SRAM (Special Issue on ULSI Memory Technology)

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概要

• 論文の詳細を見る

• The effects of α-particle-induced parasitic bipolar current on soft errors in submicron 6-transistor SOI SRAMs were numericaly studied. It was shown that the bipolar current induces soft errors and that there exists a critical quantity which determines the soft error occurrence in the SOI SRAMs. Simulated soft error rates were in the same order as those for bulk SRAMs.

• 社団法人電子情報通信学会の論文
• 1996-06-25

著者

• TOSAKA Yoshiharu

  Fujitsu Laboratories Ltd.

• SUZUKI Kunihiro

  Fujitsu Laboratories Ltd.

• Suzuki Kunihiro

  Department Of Histology Cytology And Developmental Anatomy Nihon University School Of Dentistry At M

• Suzuki K

  Oki Electric Ind. Co. Ltd. Hachioji‐shi Jpn

• SATOH Shigeo

  FUJITSU Ltd.

• SUGII Toshihiro

  FUJITSU LABORATORIES LTD.

• Satoh S

  Communications Res. Lab. Koganei‐shi Jpn

• Satoh Shigeo

  Fujitsu Laboratories Ltd.

• Sugii T

  Fujitsr Ltd. Akiruno-shi Jpn

• Suzuki Kunihiro

  Fujitsu Laboratories Limited., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

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