Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors

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概要

• 論文の詳細を見る

• We derived analytical models for the current-voltage characteristics of double-gate silicon-on-insulator metal oxide-semiconductor-field-effect-transistors. In the subthreshold region, we derived an analytical subthreshold slope model considering both depleted and induced charges. We proposed a unique definition of threshold voltage of the device, and showed that the threshold voltage is close to the experimentally defined threshold voltage at which the drain current has a specific value. The variation in the surface potential after the threshold voltage was modeled, and hence the models are valid in the moderate-inversion region as well as in the strong-inversion region. The models agree well with experimental data.

• 社団法人応用物理学会の論文
• 1993-11-15

著者

• SUZUKI Kunihiro

  Fujitsu Laboratories Ltd.

• Suzuki K

  Fujitsu Laboratories Ltd.

• TANAKA Tetsu

  Fujitsu Laboratories Ltd.

• Satoh Shiro

  Semiconductor Research Laboratory Clarion Co. Ltd.

• Satoh Shigeo

  Fujitsu Laboratories Ltd.

• Ando S

  Sci. Univ. Tokyo Tokyo Jpn

• ANDO Satoshi

  Fujitsu Laboratories Ltd.

• Suzuki Kunihiro

  Fujitsu Laboratories Limited., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

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