Metal Oxide semiconductor Field Effect Transistor (MOSFET) Model Based on a Physical High-Field Carrier-Velocity Model
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-01-15
著者
-
USUKI Tatsuya
Fujitsu Laboratories Ltd.
-
Usuki Tatsuya
Collaborative Institute For Nano Quantum Information Electronics The University Of Tokyo
-
Usuki Tatsuya
Fujitsu Lab. Ltd. Atsugi Jpn
-
Usuki T
Fujitsu Laboratories Limited
-
SUZUKI Kunihiro
Fujitsu Laboratories Ltd.
関連論文
- First Demonstration of Electrically Driven 1.55μm Single-Photon Generator
- Single-photon generator for telecom applications
- Development of Electrically Driven Single-Photon Emitter at Optical Fiber Bands
- Single-Photon Generation in the 1.55-μm Optical-Fiber Band from an InAs/InP Quantum Dot
- Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
- A 1V Peak-to-Peak Driven 10-Gbps Slow-Light Silicon Mach-Zehnder Modulator Using Cascaded Ring Resonators
- Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- Observation of Exciton Transition in 1.3-1.55μm Band from Single InAs/InP Quantum Dots in Mesa Structure
- New Scheme of Electrostatic Discharge Circuit Simulations Using Protection Device Model with Generated-Hole-Dependent Base Resistance
- Triggered single-photon emission and cross-correlation properties in InAlAs quantum dot
- Photon Antibunching Observed from an InAlAs Single Quantum Dot
- Transmission Experiment of Quantum Keys over 50km Using High-Performance Quantum-Dot Single-Photon Source at 1.5μm Wavelength
- High Tilt Angle Ion Implantation into Polycrystalline Si Gates
- Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
- Boron Penetration Enhanced by Gate Ion Implantation Damage in PMOSFETs
- Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
- Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
- Boron Diffusion in Nitrided-Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
- Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
- Sb Multiple Ion Implanted Channel for Low V_, Deep Submicron SOI-pMOSFETs
- Thermal Budget for Fabricating a Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
- Vth Rolloff Free Sub 0.1μm SOI MOSFETs Using Counter Doping into a Uniformly and Heavily Doped Channel Region
- Thermal Budget for Fabricating A Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
- Spin Depolarization via Tunneling Effects in Asymmetric Double Quantum Dot Structure
- Metal Oxide semiconductor Field Effect Transistor (MOSFET) Model Based on a Physical High-Field Carrier-Velocity Model
- Thermodynamic Quantities of the One-Dimensional Hubbard Model at Finite Temperatures
- Thermoelectric Power of the Anderson Model at Low Temperatures
- Advanced SOI Devices Using CMP and Wafer Bonding
- High Activation of Ga at Low Temperatures
- High-Speed and Low-Power n^+-p^+ Double-Gate SOI CMOS
- Impact of Current Gain Increment Effect on Alpha Particle Induced Soft Errors in SOI DRAMs
- Theoretical Study of Alpha-Particle-Induced Soft Errors in Submicron SOI SRAM (Special Issue on ULSI Memory Technology)
- Advantage of a Quasi-Nonvolatile Memory with Ultra Thin Oxide
- Theoretical Analysis of Write Errors and Number of Stored Electrons for Ten-Nanoscale Si Floating-Dot Memory
- Extraction of Depth-Dependent Lateral Standard Deviation from One-Dimensional Tilted Implantation Profiles
- Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors
- New Scheme of Electrostatic Discharge Circuit Simulations Using Protection Device Model with Generated-Hole-Dependent Base Resistance
- Resistivity of Heavily Doped Polycrystalline Silicon Subjected to Furnace Annealing
- Threshold Voltage Instability of 45-nm-node Poly-Si-or FUSI-Gated SRAM Transistors Caused by Dopant Lateral Diffusion in Poly-Si
- Silicon-Wire Waveguide Based External Cavity Laser for Milliwatt-Order Output Power and Temperature Control Free Operation with Silicon Ring Modulator
- Analytical Threshold Voltage Model for Double-Gate Schottky Source/Drain Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
- High Tilt Angle Ion Implantation into Polycrystalline Si Gates
- Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
- First Demonstration of Electrically Driven 1.55 μm Single-Photon Generator
- Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Model Based on a Physical High-Field Carrier-Velocity Model
- Quasi Crystal Lindhard–Scharff–Schiott Theory and Database for Ion Implantation Profiles in Si1-xGex Substrate Based on the Theory
- Thermal Budget for Fabricating a Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide