Metal Oxide semiconductor Field Effect Transistor (MOSFET) Model Based on a Physical High-Field Carrier-Velocity Model

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-01-15

著者

• USUKI Tatsuya

  Fujitsu Laboratories Ltd.

• Usuki Tatsuya

  Collaborative Institute For Nano Quantum Information Electronics The University Of Tokyo

• Usuki Tatsuya

  Fujitsu Lab. Ltd. Atsugi Jpn

• Usuki T

  Fujitsu Laboratories Limited

• SUZUKI Kunihiro

  Fujitsu Laboratories Ltd.

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