Theoretical Analysis of Write Errors and Number of Stored Electrons for Ten-Nanoscale Si Floating-Dot Memory
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概要
- 論文の詳細を見る
A basic trade-off between write errors, the number of stored electrons and applied voltage was obtained for ten-nanoscale Si floating-dot memory, which was studied as a single electron device. For the ten-nanoscale dot size, more than seven electrons are necessary for reliable writing at room temperature. Furthermore, to retain writing accuracy, we have to increase the applied voltage if the floating-dot size is reduced to single electron operation. Such ten-nanoscale memory with a small number of electrons can still have a small energy consumption of about 5×10^<-19> J per writing operation. This will be the new target instead of using single electron devices.
- 社団法人応用物理学会の論文
- 1998-06-15
著者
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USUKI Tatsuya
Fujitsu Laboratories Ltd.
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FUTATSUGI Toshiro
Fujitsu Laboratories Ltd.
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Usuki Tatsuya
Fujitsu Lab. Ltd. Atsugi Jpn
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NAKAJIMA Anri
Fujitsu Laboratories Ltd.
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