Photon Antibunching Observed from an InAlAs Single Quantum Dot

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概要

• 論文の詳細を見る

• Single-photon emitters and detectors are the key devices to realize secure communications with single-photon-based quantum cryptography and single-photon-based quantum computing. InAlAs quantum dots (QDs) cover the wavelength range with high quantum efficiencies of Si-based single-photon detectors. Clear photon antibunching was observed from an InAlAs single QD under weak excitations. To realize single-photon emitters on demand, complete population of the QD energy states before the photon emission events is necessary, but the measured antibunching properties were dependent substantially on the photo-excitation powers. The physical origin of this problem is discussed and the criterion to distinguish the real deviation from the photon antibunching condition and the artifact of themeasurements is clarified. The capability of single-photon emissions on demand will be demonstrated with photon antibunching under pulsed operations.

• Japan Society of Applied Physicsの論文
• 2005-07-10

著者

• HIROSE Shinichi

  Fujitsu Laboratories Ltd.

• USUKI Tatsuya

  Fujitsu Laboratories Ltd.

• MUTO Shunichi

  Department of Applied Physics, Hokkaido University

• Usuki Tatsuya

  Collaborative Institute For Nano Quantum Information Electronics The University Of Tokyo

• Usuki Tatsuya

  Fujitsu Lab. Ltd. Atsugi Jpn

• Sasakura Hirotaka

  Department Of Applied Physics Hokkaido University

• Muto Shigeki

  Department Of Physics School Of Science Tokai University

• KIMURA Satoshi

  RIES, Hokkaido University

• KUMANO Hidekazu

  RIES, Hokkaido University

• ENDO Michiaki

  RIES, Hokkaido University

• SUEMUNE Ikou

  RIES, Hokkaido University

• YOKOI Tomonori

  Department of Applied Physics, Hokkaido University

• SASAKURA Hirotaka

  CREST JST

• ADACHI Satoru

  Department of Applied Physics, Hokkaido University

• SONG Hai

  CREST JST

• USUKI Tatsuya

  CREST JST

• Suemune Ikou

  Research Institute For Electronic Science Hokkaido University

• Yokoi Tomonori

  Department Of Applied Physics Hokkaido University

• Muto S

  Kek Ibaraki

• Suemune Ikuo

  RIES, Hokkaido University

• Muto Shunichi

  Department of Applied Physics, Hokkaido Univercity, Sapporo 060-8628, Japan

• Adachi Satoru

  Department of Applied Physics, Hokkaido Univercity, Sapporo 060-8628, Japan

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