Usuki Tatsuya | Fujitsu Lab. Ltd. Atsugi Jpn

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著作論文

First Demonstration of Electrically Driven 1.55μm Single-Photon Generator
Single-photon generator for telecom applications
Development of Electrically Driven Single-Photon Emitter at Optical Fiber Bands
Single-Photon Generation in the 1.55-μm Optical-Fiber Band from an InAs/InP Quantum Dot
Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
A 1V Peak-to-Peak Driven 10-Gbps Slow-Light Silicon Mach-Zehnder Modulator Using Cascaded Ring Resonators
Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
Observation of Exciton Transition in 1.3-1.55μm Band from Single InAs/InP Quantum Dots in Mesa Structure
Triggered single-photon emission and cross-correlation properties in InAlAs quantum dot
Photon Antibunching Observed from an InAlAs Single Quantum Dot
Transmission Experiment of Quantum Keys over 50km Using High-Performance Quantum-Dot Single-Photon Source at 1.5μm Wavelength
Spin Depolarization via Tunneling Effects in Asymmetric Double Quantum Dot Structure
Metal Oxide semiconductor Field Effect Transistor (MOSFET) Model Based on a Physical High-Field Carrier-Velocity Model
Advantage of a Quasi-Nonvolatile Memory with Ultra Thin Oxide
Theoretical Analysis of Write Errors and Number of Stored Electrons for Ten-Nanoscale Si Floating-Dot Memory
Silicon-Wire Waveguide Based External Cavity Laser for Milliwatt-Order Output Power and Temperature Control Free Operation with Silicon Ring Modulator
Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Model Based on a Physical High-Field Carrier-Velocity Model

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