Nishikawa Y | Materials And Devices Research Laboratories Toshiba Corporation

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著作論文

Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
Lasing Characteristics and Carrier Dynamics of 1.3-μm InGaAs/GaAs Quantum Dot Lasers
Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling
Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots
Dynamic Properties of InAs Self-Assembled Quantum Dots Evaluated by Capacitance-Voltage Measurements
Interdiffusion between InAs Quantum Dots and GaAs Matrices
Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells
Performance of All-Optical Switch Utilizing the Spin-Dependent Transient Rotation in a Multiple-Quantum-Well Etalon
Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate
Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
Quantum Dots Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
The Influence of Surface Treatment on the Quality of Pd/Au Contacts to p-type ZnSe
Surface Preparation Effects for Molecular Beam Epitaxial Growth of ZnSe Layers on InGaP Layers
Highly Reliable Operation of InGaP/InGaAlP Multi-Quantum-Well Visible Laser Diodes
High-Power InGaAIP Laser Diodes for High-Density Optical Recording : Visible Lasers
High-Power InGaAlP Laser Diodes for High-Density Optical Recording
Reliable High-Power Operation of InGaAlP Visible Light Laser Diodes with Strained Active Layer
Electrical Properties of Single Crystalline CeO_2 High-k Gate Dielectrics Directly Grown on Si(111)
Direct Growth of Single Crystalline CeO_2 High-k Gate Dielectrics
Effects of Growth Parameters on Oxygen Incorporation into InGaAlP Grown by Metalorganic Chemical Vapor Deposition
Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
Enhancement of Nitrogen Incorporation in ZnSe Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography

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