Sugiyama Y | Fujitsu Laboratories Ltd.

スポンサーリンク

概要

関連著者

もっと見る

著作論文

InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot (TSR-QD)Technology (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111) B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy
All-Solid-State, THz Radiation Source Using a Saturable Bragg Reflector in a Femtosecond Mode-Locked Laser
Ultraviolet picosecond pulses from an all-solid-state Ce : LiSAF master oscillator and Ce : LiCAF power amplifier system
Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
Differences in Tunneling Time between 77 K and Room Temperature for Tunneling Biquantum Wells
Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
THz-radiation Generation from an Intracavity Saturable Bragg Reflector in a Magnetic Field
Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
Difference in Diffusion Length of Ga Atoms under As_2 and As_4 Flux in Molecular Beam Epitaxy
Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope
Fabrication of Quantum Wire Structures on Non-Planer InP Substrates by Molecular Beam Epitaxy (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope
Electrooptic Vector Sampling : Measurement of Vector Components of Electric Field by the Polarization Control of Probe Light

もっと見る

スポンサーリンク