Hiyamizu Satoshi | Fujitsu Laboratories Limited

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概要

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著作論文

A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
The Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE
Structure Analysis of GaAs-AlAs Superlattice Grown by Molecular Beam Epitaxy
Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
Reply to the Comment by H.L. Stormer
The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
Magnetoconductance Investigations of Al_xGa_As/GaAs Heterojunction FET in Strong Magnetic Fields
Galvanomagnetic Study of 2-Dimensional Electron Gas in Al_xGa_As/GaAs Heterojunction FET
Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures
Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
Improved Electron Mobility Higher than 10^6 cm^2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-Al_xGa_As Heterostructure on the AlAs Mole Fraction
Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures
Energy-Band Offset of In_Ga_As-In_(Ga_AI_x)_As Heterostructures, Determined by Photoluminescenee Excitation Spectroscopy of Quasi-Parabolie Quantum Wells Grown by MBE
Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
High Electron Mobility Transistor Logic
Enhancement-Mode High Electron Mobility Transistors for Logic Applications
A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure
Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
Monolithic 1×4 Array of Uniform Radiance AlGaAs-GaAs LED's Grown by Molecular Beam Epitaxy
Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs
Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_As Heterojunctions

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