Hikosaka K | Fujitsu Lab. Ltd. Kanagawa Jpn

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概要

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著作論文

Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
High f_T 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates
DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
High Electron Mobility Transistor Logic
Selective Dry Etching of AlGaAs-GaAs Heterojunction
Hyperon Nonleptonic Decays Revisited
0.1μm-Gate InGaP/InGaAs HEMT Technology for Millimeter Wave Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
The Mass Levels of Q^2 ^2 States in (3+1) Dimensional Lattice Gauge Theory

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