High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
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概要
- 論文の詳細を見る
We fabricated 50-nm-gate InAlAs/InGaAs high electron mobility transitors (HEMTs) lattice-matched to InP substrates by using a conventional process under low temperatures, below 300℃, to prevent fluorine contamination and suppress possible diffusion of the Si-δ-doped sheet in the electron-supply layer, and measured the DC and RF performance of the transistors. The DC measurement showed that the maximum transconductance g_m of a 50-nm-gate HEMT is about 0.91 S/mm. The cutoff frequency f_T of our 50-nm-gate HEMT is 362 GHz, which is much higher than the values reported for previous 50-nm-gate lattice-matched HEMTs. The excellent RF performance of our HEMTs results from a shortening of the lateral extended range of charge control by the drain field, and this may have been achieved because the low-temperature fabrication process suppressed degradation of epitaxial structure.
- 社団法人電子情報通信学会の論文
- 2001-10-01
著者
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Endoh Akira
National Inst. Of Information And Communications Technol. (nict) Koganei‐shi Jpn
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MATSUI Toshiaki
Communication Research Laborator
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ENDOH Akira
Fujitsu Laboratories Ltd.
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Endoh A
Fujitsu Lab. Ltd. Atsugi Jpn
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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Yamashita Yoshimi
Fujitsu Laboratories Ltd.
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Hiyamizu S
Osaka Univ. Osaka Jpn
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MIMURA Takashi
Fujitsu Laboratories Lid.
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Hikosaka K
Fujitsu Lab. Ltd. Kanagawa Jpn
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HIKOSAKA Kohki
Fujitsu Laboratories Ltd.
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HIGASHIWAKI Masataka
the Graduate School of Engineering Science, Osaka University
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HIYAMIZU Satoshi
the Graduate School of Engineering Science, Osaka University
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Matsui Toshiaki
Communications Research Laboratory Ministry Of Posts And Telecommunications
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Mimura Takashi
National Institute Of Information And Communications Technology (nict)
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Matsui Toshiaki
National Institute Of Information And Communications Technology (nict)
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Higashiwaki M
National Institute Of Information And Communications Technology
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Yamashita Yoshimi
Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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