Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-12-01

著者

• Adachi Akira

  R&d Division Nissin Electric Co. Ltd.

• Sano Naokatsu

  Faculty Of Science Kwansei-gakuin University

• Sano Naokatsu

  Faculty Of Engineering Science Osaka University

• Sano Naokatsu

  Department Of Physics School Of Science Kwansei Gakuin University

• Sano Naokatsu

  School Of Science Kwansei Gakuin University

• SANO Naoki

  Sony Research Center

• Adachi A

  Advanced Materials Laboratory Japan Chemical Innovation Institute

• Wakejima Akio

  Faculty Of Engineering Science Osaka University

• HIYAMIZU Satoshi

  Graduate School of Engineering Science, Osaka University

• OKAMOTO Yasunori

  Research and Headquarters, Kubota Corporation

• HIYAMIZU Satoshi

  Faculty of Engineering Science, Osaka University

• SHIMOMURA Satoshi

  Faculty of Engineering Science, Osaka University

• ADACHI Akira

  Research Development Division, Nissin Electric Co. Ltd.

• MURASE Kazuo

  Faculty of Science, Osaka University

• Shimomura S

  Graduate School Of Science And Engineering Ehime University

• Shimomura Satoshi

  Department Of Physical Science Graduate School Of Engineering Science Osaka University

• Hiyamizu S

  Osaka Univ. Osaka Jpn

• Murase Kazuo

  Faculty Of Science Osaka University

• Okamoto Yasunori

  Research And Headquarters Kubota Corporation

• Murase K

  Nagoya Inst. Technol. Nagoya Jpn

• MURASE Kouki

  Department of Electrical Engineering, Osaka University

• Murase Kouki

  Department Of Electrical Engineering Osaka University

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