Extremely Flat Interfaces in In_xGa_<1-x>As/Al_<0.3>Ga_<0.7>As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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Adachi Akira
R&d Division Nissin Electric Co. Ltd.
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Sano Naokatsu
Faculty Of Science Kwansei-gakuin University
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Sano Naokatsu
Faculty Of Engineering Science Osaka University
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Sano Naokatsu
Department Of Physics School Of Science Kwansei Gakuin University
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Sano Naokatsu
School Of Science Kwansei Gakuin University
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SANO Naoki
Sony Research Center
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Adachi A
Advanced Materials Laboratory Japan Chemical Innovation Institute
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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SAEKI Tatsuya
Faculty of Engineering Science, Osaka University
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MOTOKAWA Takeharu
Faculty of Engineering Science, Osaka University
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KITADA Takahiro
Faculty of Engineering Science, Osaka University
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SIMOMURA Satoshi
Faculty of Engineering Science, Osaka University
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ADACHI Akira
R&D Division Nissin Electric Co., Ltd.
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OKAMOTO Yasunori
Research and Headquarters, Kubota Corporation
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HIYAMIZU Satoshi
Faculty of Engineering Science, Osaka University
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Shimomura S
Graduate School Of Science And Engineering Ehime University
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Shimomura Satoshi
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Hiyamizu S
Osaka Univ. Osaka Jpn
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KITADA Takahiro
Osaka University
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Okamoto Yasunori
Research And Headquarters Kubota Corporation
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Saeki Tatsuya
Graduate School Of Engineering Science Osaka University
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Motokawa Takeharu
Faculty Of Engineering Science Osaka University
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Kitada Tadayoshi
Institute Of Technology And Science University Of Tokushima
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