Super-Flat Interfaces in Pseudomorphic In_xGa_<1-x>As/Al_<0.28>Ga_<0.72>As Quantum Wells with High In Content (x = 0.15) Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る

• Pseudomorphic In.Ga) .As/Alg.zgGa0.7zAs (-x = 0.085-0.15) quantum welts (QWs) with well widths of 1.2, 2.4, 3.6, 4.8, 7.2 and 12 nm have been grown on (411)A and (100) GaAs substrates at a temperature (T_s) of 520℃ by molecular beam epitaxy (MBE). The interface flatness of the QWs was characterized by photoluminescence (PL) at 4.2 K. PL linewidths of the narrow (411)A QWs (L_w = 2.4nm) with x = 0.085 and 0.15 were 7.3 meV which is approximately 30-40% smaller than those of the (100) QWs, indicating that extremely flat interfaces over a macroscopic area [(411)A super-flat interfaces] have been realized in the pseudomorphic In_xGa_<1-x>As/Al_<0.28>Ga_<0.72>As QWs (up to x = 0.15) grown on the (411)A GaAs substrates, similar to lattice-matched GaAs/Al_xGa_<1-x>As QWs grown on (411)A GaAs substrate previously reported.

• 社団法人応用物理学会の論文
• 1998-08-15

著者

• SHIMOMURA Satoshi

  Graduate School of Engineering Science, Osaka University

• HIYAMIZU Satoshi

  Graduate School of Engineering Science, Osaka University

• Ohashi M

  Tohoku Univ. Sendai Jpn

• Shimomura S

  Graduate School Of Science And Engineering Ehime University

• Shimomura Satoshi

  Department Of Physical Science Graduate School Of Engineering Science Osaka University

• Hiyamizu S

  Osaka Univ. Osaka Jpn

• Hiyamizu Satoshi

  Graduate School Of Engineering Science Osaka University

• KITADA Takahiro

  Osaka University

• KITADA Takahiro

  Graduate School of Engineering Science, Osaka University

• Okamoto Yasunori

  Research And Headquarters Kubota Corporation

• Saeki Tatsuya

  Graduate School Of Engineering Science Osaka University

• OHASHI Masanobu

  Graduate School of Engineering Science, Osaka University

• Kitada Tadayoshi

  Institute Of Technology And Science University Of Tokushima

関連論文

• 20pHT-5 高濃度ドーパント添加シリコン中の転位の構造特性(20pHT 格子欠陥,ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 20pHT-10 ゲルマニウム中の酸素不純物の赤外分光法による評価(20pHT 格子欠陥,ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
• 25pYK-7 ゲルマニウム中の転位の運動速度(格子欠陥・ナノ構造(半導体,理論,力学物性),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• Magnetic Phase Transition in DyNi_2Si_2
• 26pYH-2 電気的ブレイクダウンによるシリコンナノチェイン/カーボンナノチューブ変換(ナノチューブ・ナノワイヤ,領域9,表面・界面,結晶成長)
• 25aYC-5 ナノ領域に選択成長させた触媒からのナノワイヤ生成(25aYC ナノチューブ・ナノワイヤ・結晶成長,領域9(表面・界面,結晶成長))
• 24aZD-9 成長中光照射によるZnSe擬似格子整合膜の構造変化(24aZD 領域10,領域4合同招待講演,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• Opto-TEM 法によるw-ZnO中の転位の光学応答解析
• 25pYK-5 シリコン結晶育成時のシード・結晶界面でのミスフィット転位発生(格子欠陥・ナノ構造(半導体,理論,力学物性),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 27pRB-5 シリコンの曲げ変形と転位の動特性(27pRB 格子欠陥・ナノ構造(転位・表面・界面),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 22pWA-13 ZnO結晶の硬度特性と転位挙動(22pWA 格子欠陥・ナノ構造(電子状態・表面界面・転位・面欠陥),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 22pWA-11 ZnO中の転位の電子励起誘起運動(22pWA 格子欠陥・ナノ構造(電子状態・表面界面・転位・面欠陥),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
• 22pPSA-39 個々のナノチェインの電気的ブレイクダウン(22pPSA 領域9ポスターセッション,領域9(表面・界面,結晶成長))
• 24pYF-15 ZnO中の転位に関係する局在電子準位(格子欠陥・ナノ構造(半導体),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 24aYF-6 ワイドギャップ半導体の強度特性と転位運動(格子欠陥・ナノ構造(力学物性・転位),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 24pTA-8 塑性変形したバルクZnO単結晶の降伏強度と転位の運動(格子欠陥・ナノ構造(転位・機械的性質),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 24pTA-9 塑性変形したZnOの光学特性(格子欠陥・ナノ構造(転位・機械的性質),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
• 24pXC-2 VLS成長によるシリコンナノワイヤーの臨界直径(ナノワイヤ・ナノチューブ,領域9(表面・界面, 結晶成長))
• 13pTJ-11 TEM-CL 法による双晶面が存在する AlGaAs の光学特性の評価(電子線, 領域 10)
• 15aPS-25 荒れた表面における吸着原子の表面拡散係数(領域 9)
• 12aXG-12 触媒 CVD 法によるシリコンナノワイヤー成長初期過程の定量解析(ナノチューブ・ナノワイヤ, 領域 9)
• Magnetic Structure of C14-Laves Phase DyMn_2
• Antiferroquadrupolar Ordering and Magnetic Properties of the Tetragonal DyB_2C_2 Compound
• The New Neutron Powder Diffractometer with a Multi-Detector System for High-Efficiency and High-Resolution Measurements
• Crystalline Electric Field and Magnetic Properties of the TmCu_2Si_2 Intermetallics
• 26aWZ-4 P添加Si中の転位構造(26aWZ 格子欠陥・ナノ構造(半導体),領域10(誘電体格子欠陥,X線・粒子線フォノン))
• 26aWZ-3 高濃度に不純物を添加したゲルマニウム結晶中での転位の挙動(26aWZ 格子欠陥・ナノ構造(半導体),領域10(誘電体格子欠陥,X線・粒子線フォノン))
• Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
• Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
• Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by MBE
• High-Density GaAs/AlAs Quantum Wires Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
• Highly Uniform GaAs/AIAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
• Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
• ^Dy and ^Gd Mossbauer Spectroscopy of the RTC_2 Intermetallics (R=Dy, Gd ; T=Ni, Co)
• Neutron Diffraction Study of C14-Laves Phase TbMn_2
• ^Dy Mossbauer Spectroscopy of the Intermetallic Compounds DyNi_2Si_2, DyNi_2Ge_2 and DyAg_2Si_2
• Magnetic Behavior of Helical Magnet Fe_Co_Si
• Magnetic Properties of Ternary DyMn_2X_2 Compounds (X=Si and Ge)(Magnetism)
• Itinerant Electron Ferromagnetism in Fe_Co_xSi Studied by Polarized Neutron Diffraction
• Observation of the Antiferromagnetic Ordering in La_2CuO_4
• Semiconductor Spin Electronics
• A Spin Esaki Diode
• Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
• New Semiconductor Second-Harmonic Generator Based on Quasi-Phase-Matching for Cavity-Enhanced Fundamental Standing Wave
• Magnetic Structure of Rhombohedral Cr_2Se_3
• Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
• Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
• Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
• Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
• Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
• Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-Al_xGa_As Heterostructure on the AlAs Mole Fraction
• Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
• Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
• Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
• Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
• MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
• MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
• Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
• Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
• Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
• AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
• Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
• Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
• Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
• High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• High f_T 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates
• DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
• Recovery of (411)A Superflat Interfaces in GaAs/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrate by Molecular Beam Epitaxy
• A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
• Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure
• Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
• A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
• Preparation of Superconductive Bi-Sr-Ca-Cu-O Thick Films by Rapid Quenching : Electrical Properties of Condensed Matter
• Preparation of Superconductive YBa_2Cu_3O_ Thick Films by the Rapid-Quenching Technique
• Nonlinear Optical Coefficient of AlAs Thin Film on GaAs Substrate
• Monte Carlo Simulations of Electron Transport in In0.52Al0.48As/In0.75Ga0.25As High Electron Mobility Transistors at 300 and 16 K
• Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
• Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
• Photodissociation of Adsorbed Dimethylcadmium at 193 nm
• Photodissociation of Trimethylindium and Trimethylgallium on GaAs at 193 nm Studied by Angle-Resolved Photoelectron Speetroscopy
• Micro-Pump--Probe Spectroscopy of an Exciton in a Single Semiconductor Quantum Dot Using a Heterodyne Technique
• Injection-Current-Controlled Bistable Optical Switching in Semiconductor Laser Amplifiers
• Low Noise Oscillator Stabilized by Mechanically Modulated Cavity
• Parametric Transducer for Gravitational Radiation Detector
• High-Quality InGaAs Layers Grown on (411)A-Oriented InP Substrates by Molecular Beam Epitaxy
• Super-Flat Interfaces in Pseudomorphic In_xGa_As/Al_Ga_As Quantum Wells with High In Content (x = 0.15) Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
• 830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy
• Large Anisotropy of Electron Mobilities in Laterally Modulated Two-Dimensional Systems Grown on the (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy(Structure, Interfaces, and Films)
• Sharp Transmission Coefficient in GaAs/AlAs Resonant Tunneling Diodes with (411) A Superflat Interfaces Grown by Molecular Beam Epitaxy
• High-Reliability Lithography Performed by Ultrasonic and Surfactant-Added Developing System
• High-Sensitivity and High-Resolution Contact Hole Patterning by Enhanced-Wettability Developer
• A Simple Cylindrical Retarding Field Energy Analyzer
• InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
• Reflector Parameters for High Reflectance and High Contrast Ratio with White-Taylor Reflective Display
• 830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy
• High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators
• Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor
• InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance
• Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
• Effect of Bottom SiN Thickness for AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Using SiN/SiO2/SiN Triple-Layer Insulators

もっと見る 閉じる

スポンサーリンク