Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-08-20
著者
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MUTO Shunichi
Fujitsu Laboratories Ltd.
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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Hiyamizu Satoshi
Fujitsu Limited
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KONDO Kazuhiro
Fujitsu Limited
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Komeya Katutoshi
Graduate School Of Environment And Information Science Yokohama National University
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SASA Shigehiko
Fujitsu Laboratories Ltd.
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Hiyamizu Satoshi
Fujitsu Laboratories Limited
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Muto S
Kek Ibaraki
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Kondo Kazuhiro
Fujitsu Laboratories Ltd.
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Kondo K
Fujitsu Laboratories Ltd.
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ISHIKAWA Hideaki
Fujitsu Laboratories Ltd.
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Ishikawa T
Fujitsu Laboratories Ltd.
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Sasa S
Fujitsu Laboratories Ltd.
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Sasa Shigehiko
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
関連論文
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- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- Performance of All-Optical Switch Utilizing the Spin-Dependent Transient Rotation in a Multiple-Quantum-Well Etalon
- Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate
- Band-Gap Renormalization and Excitonic Effects in Tunneling in Asymmetric Double Quantum Wells
- Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111) B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy
- Highly Uniform Si-Doped GaAs Epitaxial Layers Grown by MBE Using a TEG, Arsenic, and Silicon System
- Substrate Temperature Dependence of Carbon Incorporation into GaAs Grown by MBE Using Triethylgallium and As_4
- Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
- GaAs Surface Cleaning with HCl Gas and Hydrogen Mixture for Molecular-Beam-Epitaxial Growth : Semiconductors and Semiconductor Devices
- Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
- Threshold Behavior of a Bistable Ferroelectric Liquid Crystal with a Large Tilt Angle in Thick Cells (4-14μm) : Condensed matter
- New Room-Temperature Ferroelectric Liquid Crystals : Material Constants and Electro-Optic Properties
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- Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by MBE
- High-Density GaAs/AlAs Quantum Wires Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
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- The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
- Magnetoconductance Investigations of Al_xGa_As/GaAs Heterojunction FET in Strong Magnetic Fields
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- Time Evolution of Excitonic Absorption Bleaching of Resonant Tunneling Bi-Quantum-Well Structures
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- Fast Recovery of Excitonic Absorption Peaks in Tunneling Bi-Quantum-Well Structures
- Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling
- Numerical Study of Effect of Fabrication Damage on Carrier Dynamics in MQW Narrow Wires
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- Super-Flat Interfaces in Pseudomorphic In_xGa_As/Al_Ga_As Quantum Wells with High In Content (x = 0.15) Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
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- Sharp Transmission Coefficient in GaAs/AlAs Resonant Tunneling Diodes with (411) A Superflat Interfaces Grown by Molecular Beam Epitaxy
- Fabrication of Sub-100 nm Wires and Dots in GaAs/AlGaAs Multiquantum Well Using Focused Ion Beam Lithography
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