Schottky Barrier Height of Al n-In_<0.53>Ga_<0.47>As and Nb/n-In_<0.53>Ga_<0.47>As Diodes
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概要
- 論文の詳細を見る
The barrier heights of Al n-In_<0.53>Ga_<0.47>As and Nb/n-In_<0.53>Ga_<0.47>As diodes were measured using standard current-voltage and current-temperature techniques. An Al film was evaporated in situ on MBE-grown n-InGaAs. A Nb film was deposited by rf sputtering on an Ar sputter cleaned surface. The barrier height was 0.2 eV for the AN/n-InGaAs diode, and below 0.1 eV for the Nb/n-InGaAs diode.
- 社団法人応用物理学会の論文
- 1987-01-20
著者
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MUTO Shunichi
Fujitsu Laboratories Ltd.
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TAMURA Hirotaka
Fujitsu Laboratory Ltd.
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YOSHIDA Akira
Fujitsu Limited
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Hasuo Shinya
Fujitsu Laboratories Ltd.
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Tamura Hirotaka
Fujitsu Laboratories Ltd.
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Yoshida Akira
Fujitsu Laboratories Ltd.
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