Current Injection Effects in a Nb/AlO_x-Al/Nb/n-InSb Triode
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概要
- 論文の詳細を見る
A Nb/AlO_x-Al/Nb/n-InSb triode has been fabricated and tested. The device is made on the (100) surface of undoped n-type InSb. The fabrication process is similar to that for Nb/Al-AlO_x/Nb Josephson junctions. The transfer efficiency for injected electrons through a 240 nm thick Nb base layer was measured to be 1.6×10^<-4> at 4.2 K.
- 社団法人応用物理学会の論文
- 1985-09-20
著者
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TAMURA Hirotaka
Fujitsu Laboratory Ltd.
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Hasuo Shinya
Fujitsu Laboratories Ltd.
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YAMAOKA Toyoshi
Fujitsu Ltd.
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Tamura Hirotaka
Fujitsu Laboratories Ltd.
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Yamaoka Toyoshi
Fujitsu Laboratories
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Yamaoka Toyoshi
Fujitsu Laboratories Ltd.
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