Fabrication of DC-SQUIDs and Their Characteristics for Digital Applications : C-2: JOSEPHSON DEVICES

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1980-04-30

著者

• Hasuo Shinya

  Fujitsu Laboratories Ltd.

• DAZAI Koichi

  Fujitsu Laboratories

• Dazai Koichi

  Fujitsu Laboratories Ltd.

• SUZUKI Hideo

  Fujitsu Laboratories Ltd.

関連論文

• Residual Donors in High Purity Gallium Arsenide Epitaxially Grown from Vapor Phase
• Photo-Ionization Cross Section Measurements of Deep Levels in Iron Doped GaAs
• Photoluminescence of GaAs Grown by Vapor Phase Epitaxy
• Fabrication of DC-SQUIDs and Their Characteristics for Digital Applications : C-2: JOSEPHSON DEVICES
• AuAl_2 Thin Film Resistors for Josephson Integrated Circuits
• 5.6 ps Gate Delay All Refractory Josephson OR Gate with Modified Variable Threshold Logic
• Schottky Barrier Height of Al n-In_Ga_As and Nb/n-In_Ga_As Diodes
• Current Injection Effects in a Nb/AlO_x-Al/Nb/n-InSb Triode
• 9 ps Gate Delay Josephson OR Gate with Modified Variable Threshold Logic
• Strato-Mesospheric Ozone Monitoring System Using an SIS Mixer (Special Issue on Toward Digital and Analog Applications of Superconductors)
• Measurement of Grey Zone of a Josephson SFQ Memory Cell

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