Two Step Photoconductive Decay of Ge:Hg Detectors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1971-10-05
著者
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Ueda Yoichi
Fujitsu Laboratories
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Ueda Yoichi
Fujitsu Labolatories Ltd.
-
Kaneda Takao
Fujitsu Laboratories
-
Yamaoka Toyoshi
Fujitsu Laboratories
-
Sei Hideo
Fujitsu Laboratories
関連論文
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- Electroreflectance Measurements on Cd_xHg_Te
- 5.6 ps Gate Delay All Refractory Josephson OR Gate with Modified Variable Threshold Logic
- Transmission Electron Microscope Observation of Mechanically Damaged InGaAsP/InP Double-Heterostructure Light-Emitting Diode
- The Crystal Growth of Homogeneous Hg_Cd_xTe by the Bridgman Method
- Hall Effect in Hg_Cd_xTe
- Anomalous Hall Effect in Hg_Cd_xTe
- Power Dependence on Repetition Time of the Q-Switched CO_2 Laser
- Current Injection Effects in a Nb/AlO_x-Al/Nb/n-InSb Triode
- 9 ps Gate Delay Josephson OR Gate with Modified Variable Threshold Logic
- Surface Discharge Color AC-Plasma Display Panel
- The Frequency Response of Germanium Avalanche Photodiodes
- Heterojunction Effect on Spectral and Frequency Responses in InP/InGaAsP/InGaAs APD : B-3: NOVEL DEVICES
- Two Step Photoconductive Decay of Ge:Hg Detectors
- The Degeneracy of Hg Level in Ge
- Avalanche Built-Up Time of the Germanium Avalanche Photodiode
- Precipitation of Li in Si
- Two Step Photoconductive Decay of P-InSb by CO_2 Laser Light
- Slow Degradation Mechanism of GaAlAs Light-Emitting Diodes : B-3: LASER
- Measurement of Grey Zone of a Josephson SFQ Memory Cell
- CCD with Meander Channel
- The Anomalous Concentration Profile of P_2O_5 and GeO_2 in Silica Fiber
- Tunneling Current in InGaAs and Optimum Design for InGaAs/InP Avalanche Photodiode