Heterojunction Effect on Spectral and Frequency Responses in InP/InGaAsP/InGaAs APD : B-3: NOVEL DEVICES
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
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YAMAZAKI Susumu
Fujitsu Laboratories Ltd.
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KISHI Yutaka
Fujitsu Laboratories Ltd.
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Shirai Tatsunori
Fujitsu Laboratories Ltd.
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Kaneda Takao
Fujitsu Laboratories
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Kaneda Takao
Fujitsu Laboratories Ltd.
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Yamazaki Susumu
Fujitsu Laboratories Limited Semiconductor Materials Laboratory
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Yasuda Kazuhito
Fujitsu Laboratories Ltd.
関連論文
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- Large Vessels of High-T_c Bi-Pb-Sr-Ca-Cu-O Superconductor for Magnetic Shield
- Magnetic Shield of High-T_c Oxide Superconductors at 77 K
- EBIC Observation on the InP/InGaAs/InP Heterostructure Photodiode
- Admittance Study of a Single Electron Trap in the LPE InP/InGaAsP Heterostructure Diode
- Transmission Electron Microscopic Observation of Misfit Dislocation in InP/InGaAsP Double -Heterostructures
- Inhomogeneous Distribution of Avalanche Multiplication in InP APDs
- Calculation of Impurity Concentrations in LPE InP Layers
- Chemical Etching of Germanium with H_3PO_4-H_2O_2-H_2O Solution
- Direct LPE Growth of InP on (111)A Oriented In_Ga_As without Dissolution
- The Frequency Response of Germanium Avalanche Photodiodes
- Heterojunction Effect on Spectral and Frequency Responses in InP/InGaAsP/InGaAs APD : B-3: NOVEL DEVICES
- Two Step Photoconductive Decay of Ge:Hg Detectors
- The Degeneracy of Hg Level in Ge
- Avalanche Built-Up Time of the Germanium Avalanche Photodiode
- Tunneling Current in InGaAs and Optimum Design for InGaAs/InP Avalanche Photodiode