Inhomogeneous Distribution of Avalanche Multiplication in InP APDs

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1984-02-20

著者

• KOMIYA Satoshi

  Fujitsu Laboratories Ltd.

• YAMAZAKI Susumu

  Fujitsu Laboratories Ltd.

• Komiya S

  Fujitsu Laboratories Ltd.

• Komiya Satoshi

  Fujitsu Laboratories Lid.

• UMEBU Itsuo

  Fujitsu Laboratories Limited

• Komiya S

  Fujitsu Lab. Ltd. Atsugi Jpn

• TAKANOHASHI Tsugunori

  Fujitsu Laboratories Ltd.

• Yamazaki S

  Fujitsu Ltd

• Umebu I

  Fujitsu Ltd.

• Shirai Tatsunori

  Fujitsu Laboratories Ltd.

• Yamazaki S

  Fukuoka Laboratory For Emerging & Enabling Technology Of Soc Fukuoka Industry Science & Tech

• Yamazaki Susumu

  Fujitsu Laboratories Limited Semiconductor Materials Laboratory

• Takanohashi T

  Fujitsu Laboratories Ltd.

• Takanohashi Tsugunori

  Fujitsu Laboratories

• Yamazaki Susumu

  Fukuoka Laboratory for Emerging & Enabling Technology of SoC, Fukuoka Industry, Science & Technology Foundation:Graduate School of Information Science and Electrical Engineering, Kyushu University

関連論文

• Characterization of ZnSe/GaAs(001) Heteroepitaxial Interfaces by X-Ray Reflectivity Measurement
• Self-Formed In_Ga_As Quantum Dots on GaAs Substrates Emitting at 1.3 μm
• Photoluminescence Intensity in InGaAsP/InP Double-Heterostructures
• X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si(100) Formed in Chemical Treatment
• Logic-based Binding Time Analysis for Java Using Reaching Definitions
• A Case Study of Development of a Java Bytecode Analyzer Framework Using AspectJ
• Studies of Photoluminescence Intensity in the InP/InGaAsP/InP Double Heterostructure
• Analysis of Contamination Layer of InP During LPE Process by Synchrotron Radiation-Excited X-Ray Fluorescence : Surfaces, Interfaces and Films
• The Acceptor Level of Fe in In_ Ga_ P
• Repetitive One-Tenth Micron Pattern Fabrication Using An EB Block Exposure System
• Electron Beam Block Exposure System for 256 M Dynamic Random Access Memory Lithography
• Wavelength-Dispersive Total Reflection X-Ray Fluorescence with High-Brilliance Undulator Radiation at SPring-8
• Phenomenological Studies in Laser Cladding. Part II. : Thermometrical Experiments on the Melt Pool
• Phenomenological Studies in Laser Cladding. Part I. : Time-Resolved Measurements of the Absorptivity of Metal Powder
• Large Vessels of High-T_c Bi-Pb-Sr-Ca-Cu-O Superconductor for Magnetic Shield
• Magnetic Shield of High-T_c Oxide Superconductors at 77 K
• Determination of the GaAs/AlAs Superlattice Period from the First-Order Superlattice Bragg Reflection
• High-Density Layer at the SiO_2/Si Interface Observed by Difference X-Ray Reflectivity
• High-Accuracy X-ray Reflectivity Study of Native Oxide Formed in Chemical Treatment
• EBIC Observation on the InP/InGaAs/InP Heterostructure Photodiode
• Admittance Study of a Single Electron Trap in the LPE InP/InGaAsP Heterostructure Diode
• Transmission Electron Microscopic Observation of Misfit Dislocation in InP/InGaAsP Double -Heterostructures
• Inhomogeneous Distribution of Avalanche Multiplication in InP APDs
• Calculation of Impurity Concentrations in LPE InP Layers
• Reflectance Spectroscopy of (GaP)_n(GaAs)_n/GaAs Atomic Layer Superlattices
• TEM Observation of Dark Defects Appearing in InGaAsP/InP Double-Heterostructure Light Emitting Diodes Aged at High Temperature
• TEM Investigation of Dislocation Loops in Undoped InGaAsP and InGaP Layers Grown by Liquid Phase Epitaxy
• Composition-Modulated Structures in InGaAsP and InGaP Liquid Phase Epitaxial Layers Grown on (001) GaAs Substrates
• Comparison of Defect Formation in InGaAsP/InP and GaAlAs/GaAs : B-2: LD AND LED-1
• A Molecular and Jon-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Jon Beam
• Molecular Beam Epitaxy of InP Using Low Energy P^+ Ion Beam
• EXAFS Study of Cation Sites in In-thiospinel Compound FeIn_2S_4
• Dependence of Rocking Curve for Thin In_Ga_xAs_P_y Layer on Thickness in a Symmetric Bragg Case
• Transmission Electron Microscope Study of Defects in Cd-Diffused n-InP Substrates
• Direct LPE Growth of InP on (111)A Oriented In_Ga_As without Dissolution
• Effect of an InP Buffer Layer on Photoluminescence Efficiency of an InGaAsP Layer
• Thermal Degradation of InP/InGaAsP/InP DH Structure
• Life Test of GaAs DH Lasers at Room Temperature
• Baryon Multiplicity Distribution in Nuclear Matter Produced by Heavy Ion Collisions at Stopping Energy Regime : Nuclear Physics
• Heterojunction Effect on Spectral and Frequency Responses in InP/InGaAsP/InGaAs APD : B-3: NOVEL DEVICES
• Suppression of the Phase Transition to C54 TiSi_2 due to Epitaxial Growth of C49 TiSi_2 on Si(001) Substrates in Silicidation Process
• Grazing Incidence X-Ray Diffraction Study on Effect of Implanted BF^+_2 and Linewidth on Titanium Silicidation
• Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition
• Transmission Electron Microscopy Observation of CoSi_x Spikes in Si Substrates during Co-silicidation Process
• Fine Adjustment Based on Model for X-Ray Absorption Fine Structure of Ni-Fe Alloy
• Exciton-Transition Energies and Band Structure of (GaP)_n(GaAs)_n/GaAs Atomic-Layer Superlattices
• A Simultaneous RHEED/AES Combined System
• Stokes and Anti-Stokes D-A Pair Luminescences in PbI_2
• SIMS and DLTS Measurements on Fe-Doped InP Epitaxial Layers Grown by MOCVD : Semiconductors and Semiconductor Devices
• A One-Dimensional System of N-Particles Connected by Exponential Springs : Solutions by an Inverse Method
• Characterization of ZnSe/GaAs(001) Heteroepitaxial Interfaces by X-Ray Reflectivity Measurement

もっと見る 閉じる

スポンサーリンク