Studies of Photoluminescence Intensity in the InP/InGaAsP/InP Double Heterostructure

スポンサーリンク

概要

著者

関連論文

Characterization of ZnSe/GaAs(001) Heteroepitaxial Interfaces by X-Ray Reflectivity Measurement
Photoluminescence Intensity in InGaAsP/InP Double-Heterostructures
X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si(100) Formed in Chemical Treatment
Studies of Photoluminescence Intensity in the InP/InGaAsP/InP Double Heterostructure
Analysis of Contamination Layer of InP During LPE Process by Synchrotron Radiation-Excited X-Ray Fluorescence : Surfaces, Interfaces and Films
Highly Accurate Process Proximity Correction Based on Empirical Model for 0.18 μm Generation and Beyond
Development of An Accurate Optical Proximity Correction System for 1 Gbit Dynamic Random Access Memory Fabrication
Wavelength-Dispersive Total Reflection X-Ray Fluorescence with High-Brilliance Undulator Radiation at SPring-8
Determination of the GaAs/AlAs Superlattice Period from the First-Order Superlattice Bragg Reflection
High-Density Layer at the SiO_2/Si Interface Observed by Difference X-Ray Reflectivity
High-Accuracy X-ray Reflectivity Study of Native Oxide Formed in Chemical Treatment
Fabrication of a New Pyroelectric Infrared Sensor Using MgO Surface Micromachining
EBIC Observation on the InP/InGaAs/InP Heterostructure Photodiode
Admittance Study of a Single Electron Trap in the LPE InP/InGaAsP Heterostructure Diode
Transmission Electron Microscopic Observation of Misfit Dislocation in InP/InGaAsP Double -Heterostructures
Inhomogeneous Distribution of Avalanche Multiplication in InP APDs
Calculation of Impurity Concentrations in LPE InP Layers
Liquid Phase Epitaxial Growth of In_Ga_xP
GaP Liquid Phase Epitaxial Growth Using a Vertical Furnace System
TEM Observation of Dark Defects Appearing in InGaAsP/InP Double-Heterostructure Light Emitting Diodes Aged at High Temperature
TEM Investigation of Dislocation Loops in Undoped InGaAsP and InGaP Layers Grown by Liquid Phase Epitaxy
Composition-Modulated Structures in InGaAsP and InGaP Liquid Phase Epitaxial Layers Grown on (001) GaAs Substrates
Comparison of Defect Formation in InGaAsP/InP and GaAlAs/GaAs : B-2: LD AND LED-1
A Molecular and Jon-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Jon Beam
Molecular Beam Epitaxy of InP Using Low Energy P^+ Ion Beam
EXAFS Study of Cation Sites in In-thiospinel Compound FeIn_2S_4
Dependence of Rocking Curve for Thin In_Ga_xAs_P_y Layer on Thickness in a Symmetric Bragg Case
Transmission Electron Microscope Study of Defects in Cd-Diffused n-InP Substrates
Effect of an InP Buffer Layer on Photoluminescence Efficiency of an InGaAsP Layer
Thermal Degradation of InP/InGaAsP/InP DH Structure
Life Test of GaAs DH Lasers at Room Temperature
Suppression of the Phase Transition to C54 TiSi_2 due to Epitaxial Growth of C49 TiSi_2 on Si(001) Substrates in Silicidation Process
Grazing Incidence X-Ray Diffraction Study on Effect of Implanted BF^+_2 and Linewidth on Titanium Silicidation
Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition
Transmission Electron Microscopy Observation of CoSi_x Spikes in Si Substrates during Co-silicidation Process
Fine Adjustment Based on Model for X-Ray Absorption Fine Structure of Ni-Fe Alloy
A Simultaneous RHEED/AES Combined System
Characterization of ZnSe/GaAs(001) Heteroepitaxial Interfaces by X-Ray Reflectivity Measurement

もっと見る

スポンサーリンク