Dependence of Rocking Curve for Thin In_<1-x>Ga_xAs_<1-y>P_y Layer on Thickness in a Symmetric Bragg Case
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概要
- 論文の詳細を見る
The dependence of the half-width of the rocking curve and the integrated intensity for the In_<1-x>Ga_xAs_<1-y>P_y epitaxial layer on its thickness is measured in the parallel arrangement [+(400), -(400)] in a symmetric Bragg case using double-crystal diffractometry. The half-width increases abruptly with decreasing thickness in the region thinner than 0.5 μm, while the intensity increases linearly with increasing thickness in a wide region from 0.1-10μm. This dependence is explained by the dynamical diffraction theory in which the quaternary epitaxial layer is treated as a non-absorbing, thin, perfect crystal.
- 社団法人応用物理学会の論文
- 1982-09-20
著者
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KOMIYA Satoshi
Fujitsu Laboratories Ltd.
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Komiya S
Fujitsu Laboratories Ltd.
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Komiya Satoshi
Fujitsu Laboratories Lid.
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UMEBU Itsuo
Fujitsu Laboratories Limited
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AKITA Kenzo
Fujitsu Laboratories Limited
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Komiya S
Fujitsu Lab. Ltd. Atsugi Jpn
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NAKAJIMA Kazuo
Fujitsu Laboratories Ltd.
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Umebu I
Fujitsu Ltd.
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Akita Kenzo
Fujitsu Atsugi Laboratories Ltd.
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Nakajima Kazuo
Fujitsu Laboratories Lid.
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Nakajima Kazuo
Fujitsu Laboratories Limited
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