Electrical Properties of n-Type Gallium Arsenide at High Temperatures
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1971-03-05
著者
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AKITA Kenzo
Fujitsu Laboratories Limited
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Akita Kenzo
Fujitsu Atsugi Laboratories Ltd.
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Akita Kenzo
Fujitsu Laboratories Ltd.
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RYUZAN Osamu
Fujitsu Laboratories
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Ryuzan Osamu
Fujitsu Laboratories Ltd.
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IIDA Hiroaki
Fujitsu Laboratories Ltd.
関連論文
- Photoluminescence Intensity in InGaAsP/InP Double-Heterostructures
- Calculation of Impurity Concentrations in LPE InP Layers
- Residual Donors in High Purity Gallium Arsenide Epitaxially Grown from Vapor Phase
- The Vapor Growth of Pb_Sn_xTe Single Crystals
- The Temperature Dependence of Hall Coefficient of Pb_Sn_Te Single Crystals
- Photoluminescence of GaAs Grown by Vapor Phase Epitaxy
- Liquid Phase Epitaxial Growth of In_Ga_xP
- Electrical Properties of n-Type Gallium Arsenide at High Temperatures
- Hot Electron Effect in Short n^+nn^ GaAs
- Photoluminescence Study of Carbon Doped Gallium Arsenide
- Near Band-Edge Photoluminescence of Zn, Cd, Si and Ge Doped Epitaxial GaAs
- GaP Liquid Phase Epitaxial Growth Using a Vertical Furnace System
- Comparison of Defect Formation in InGaAsP/InP and GaAlAs/GaAs : B-2: LD AND LED-1
- Dependence of Rocking Curve for Thin In_Ga_xAs_P_y Layer on Thickness in a Symmetric Bragg Case
- Direct LPE Growth of InP on (111)A Oriented In_Ga_As without Dissolution