Direct LPE Growth of InP on (111)A Oriented In_<0.53>Ga_<0.47>As without Dissolution
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概要
- 論文の詳細を見る
Suitable LPE growth conditions needed to obtain (111)A oriented high-quality InP/In_<0.53>Ga_<0.47>As/InP double heterostructures were determined. These conditions were found by investigating the effects of the cooling rate, the degree of supercooling and the growth temperature on the dissolution of In_<0.53>Ga_<0.47>As in In-P solutions. The surface of InP grown on (111)A In_<0.53>Ga_<0.47>As was found to be smooth enough for use in optical devices.
- 社団法人応用物理学会の論文
- 1982-04-20
著者
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YAMAZAKI Susumu
Fujitsu Laboratories Ltd.
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AKITA Kenzo
Fujitsu Laboratories Limited
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NAKAJIMA Kazuo
Fujitsu Laboratories Ltd.
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Akita Kenzo
Fujitsu Atsugi Laboratories Ltd.
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Akita Kenzo
Fujitsu Laboratories Limited Semiconductor Materials Laboratory
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Yamazaki Susumu
Fujitsu Laboratories Limited Semiconductor Materials Laboratory
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Nakajima Kazuo
Fujitsu Laboratories Lid.
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Nakajima Kazuo
Fujitsu Laboratories Limited Semiconductor Materials Laboratory
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