SIMS and DLTS Measurements on Fe-Doped InP Epitaxial Layers Grown by MOCVD : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
SIMS and DLTS measurements have been carried out on Fe-doped InP epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD). Fe was doped with ferrocene Fe(C_5H_5)_2 and smoothly distributed in the epitaxial layers. The solubility limit of Fe is 7×10^<16>cm^<-3> at a growth temperature of 650℃. A new electrically active defect was observed in InP doped with the excess concentration of Fe over the solubility limit.
- 社団法人応用物理学会の論文
- 1988-01-20
著者
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TAKANOHASHI Tsugunori
Fujitsu Laboratories Ltd.
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NAKAJIMA Kazuo
Fujitsu Laboratories Ltd.
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Nakai Kenya
Fujitsu Laboratories
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Takanohashi Tsugunori
Fujitsu Laboratories
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Nakajima Kazuo
Fujitsu Laboratories Lid.
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