Self-Formed In_<0.5>Ga_<0.5>As Quantum Dots on GaAs Substrates Emitting at 1.3 μm
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-12-01
著者
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Sugawara Mitsuru
Fujitsu Limited And Fujitsu Laboratories Limited
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Sugawara Mitsuru
北海道大学 薬学研究臨床薬剤学
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MUKAI Kohki
Fujitsu Laboratories Ltd.
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MUKAI Kohki
Optical Semiconductor Devices Labs, Fujitsu Laboratories Ltd.
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OHTSUKA Nobuyuki
Fujitsu Laboratories Ltd.
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YAMAZAKI Susumu
Fujitsu Laboratories Ltd.
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Mukai K
Univ. Tokyo Chiba Jpn
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Yamazaki Shigeru
Corporate R&d Center Mitsui Mining & Smelting Co. Lid.
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Sugawara Mitsuru
Fujitsu Laboratories Ltd.
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Sugawara M
Fujitsu Laboratories Ltd.
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Yamazaki S
Fujitsu Laboratories Ltd.
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Sugawara M
Semiconductor Company Sony Corporation
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Sugawara M
Fujitsu Limited And Fujitsu Laboratories Limited
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Yamazaki Susumu
Fujitsu Laboratories Limited Semiconductor Materials Laboratory
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Sugawara Mitsuru
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
関連論文
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- Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
- A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
- Lasing Characteristics and Carrier Dynamics of 1.3-μm InGaAs/GaAs Quantum Dot Lasers
- Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
- Controlled Quantum Confinement Potentials in Self-Formed InGaAs Quantum Dots Grown by Atomic Layer Epitaxy Technique
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