Admittance Study of a Single Electron Trap in the LPE InP/InGaAsP Heterostructure Diode
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-11-20
著者
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KOMIYA Satoshi
Fujitsu Laboratories Ltd.
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YAMAZAKI Susumu
Fujitsu Laboratories Ltd.
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Komiya S
Fujitsu Laboratories Ltd.
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Komiya Satoshi
Fujitsu Laboratories Lid.
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UMEBU Itsuo
Fujitsu Laboratories Limited
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Komiya S
Fujitsu Lab. Ltd. Atsugi Jpn
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TAKANOHASHI Tsugunori
Fujitsu Laboratories Ltd.
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Yamazaki S
Fujitsu Ltd
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Kishi Yasuo
Functional Materials Research Center Sanyo Electric Co. Ltd.
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Umebu I
Fujitsu Ltd.
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KISHI Yutaka
Fujitsu Laboratories Ltd.
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Yamazaki S
Fukuoka Laboratory For Emerging & Enabling Technology Of Soc Fukuoka Industry Science & Tech
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Yamazaki Susumu
Fujitsu Laboratories Limited Semiconductor Materials Laboratory
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Takanohashi T
Fujitsu Laboratories Ltd.
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Takanohashi Tsugunori
Fujitsu Laboratories
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Yamazaki Susumu
Fukuoka Laboratory for Emerging & Enabling Technology of SoC, Fukuoka Industry, Science & Technology Foundation:Graduate School of Information Science and Electrical Engineering, Kyushu University
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