Molecular Beam Epitaxy of InP Using Low Energy P^+ Ion Beam
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-02-20
著者
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Komiya S
Fujitsu Laboratories Ltd.
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Komiya Satoshi
Fujitsu Laboratories Lid.
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SHIMIZU Saburo
ULVAC JAPAN, Ltd
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Komiya S
Fujitsu Lab. Ltd. Atsugi Jpn
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Makita Y
Marine Resources And Environment Institute National Institute Of Advanced Industrial Science And Tec
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Shimizu S
R&d Association Of Future Electron Devices C/o National Institute Of Advanced Industrial Science
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Shimizu Saburo
Ulvac Corporation
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TSUKAKOSHI Osamu
ULVAC Corporation, Hagisono
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KOMIYA Souji
ULVAC Corporation, Hagisono
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MAKITA Yonosuke
Electrotechnical Laboratory
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Komiya Souji
Ulvac Corporation
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Tsukakoshi O
Ulvac Corporation Hagisono
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Tsukakoshi Osamu
Ulvac Corporation
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Makita Yoji
Marine Resources and Environment Institute, National Institute of Advanced Industrial Science and Technology (AIST)
関連論文
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- Translational Phase Domains in the Cation Sublattice of Chalcopyrite Compounds
- Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Electron Diffraction Patterns : Semiconductors
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- Studies of Photoluminescence Intensity in the InP/InGaAsP/InP Double Heterostructure
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- Analysis of Contamination Layer of InP During LPE Process by Synchrotron Radiation-Excited X-Ray Fluorescence : Surfaces, Interfaces and Films
- Selectively Doped n-InAlAs/InP Heterostructures Grown by MOCVD
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- Determination of the GaAs/AlAs Superlattice Period from the First-Order Superlattice Bragg Reflection
- High-Density Layer at the SiO_2/Si Interface Observed by Difference X-Ray Reflectivity
- High-Accuracy X-ray Reflectivity Study of Native Oxide Formed in Chemical Treatment
- EBIC Observation on the InP/InGaAs/InP Heterostructure Photodiode
- Admittance Study of a Single Electron Trap in the LPE InP/InGaAsP Heterostructure Diode
- Transmission Electron Microscopic Observation of Misfit Dislocation in InP/InGaAsP Double -Heterostructures
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- Calculation of Impurity Concentrations in LPE InP Layers
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- EXAFS Study of Cation Sites in In-thiospinel Compound FeIn_2S_4
- Dependence of Rocking Curve for Thin In_Ga_xAs_P_y Layer on Thickness in a Symmetric Bragg Case
- Effect of an InP Buffer Layer on Photoluminescence Efficiency of an InGaAsP Layer
- Thermal Degradation of InP/InGaAsP/InP DH Structure
- Life Test of GaAs DH Lasers at Room Temperature
- Photoluminescence of Indirect-Band-Gap GaAs_P_x (x=0.52) Implanted with Nitrogen Ions
- Hot Implantation of Nitrogen Ions into GaAs_P_x (x=0.36)
- Suppression of the Phase Transition to C54 TiSi_2 due to Epitaxial Growth of C49 TiSi_2 on Si(001) Substrates in Silicidation Process
- Grazing Incidence X-Ray Diffraction Study on Effect of Implanted BF^+_2 and Linewidth on Titanium Silicidation
- Transmission Electron Microscopy Observation of CoSi_x Spikes in Si Substrates during Co-silicidation Process
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- UHV-IMMA Development and Application to Hydrogen Detection
- Stabilization of the Discharge in Sputter-Ion Pumps
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