Characterization of Polarity of Wurtzite GaN Film Grown by Molecular Beam Epitaxy Using NH_3

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-03-15

著者

• Hara S

  Advanced Industrial Science And Technology (aist) Power Electronics Research Center:ultra-low-loss P

• SHEN Xu-Qiang

  Electrotechnical Laboratory (ETL)

• OKUMURA Hajime

  Electrotechnical Laboratory (ETL)

• HARA Shiro

  Electrotechnical Laboratory (ETL)

• SONODA Saki

  ULVAC JAPAN, Ltd,

• SHIMIZU Saburo

  ULVAC JAPAN, Ltd

• Okumura H

  National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Okumura H

  Electrotechnical Lab. Ibaraki Jpn

• Okumura H

  Neutron Scattering Laboratory Issp The University Of Tokyo

• Okumura Hajime

  Electrotechnical Laboratory

• Shen Xu-qiang

  Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology

• Shen X‐q

  National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Sonoda S

  Lvac Inc.

• Sonoda Saki

  Ulvac Inc.

• Okunuma H

  National Institute Of Advanced Industrial Science And Technology

• Shimizu S

  R&d Association Of Future Electron Devices C/o National Institute Of Advanced Industrial Science

• Shimizu Saburo

  Ulvac Corporation

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