Selectively Doped n-InAlAs/InP Heterostructures Grown by MOCVD
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-11-20
著者
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Fukuhara Junji
Ulvac Japan Lid.
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SHIMIZU Saburo
ULVAC JAPAN, Ltd
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YAMAKAWA Hiroyuki
ULVAC JAPAN, Lid.
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Yamakawa Hiroyuki
Ulvac Corporation
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Yamakawa Hiroyuki
Ulvac Japan Lid.
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Shimizu Saburo
Ulvac Corporation
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Shimizu Saburo
Ulvac Japan Lid.
関連論文
- Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Electron Diffraction Patterns : Semiconductors
- Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
- Influence of Mn Incorporation on Molecular Beam Epitaxial Growth of GaMnN Film :Surfaces, Interfaces, and Films
- Characterization of Polarity of Wurtzite GaN Film Grown by Molecular Beam Epitaxy Using NH_3
- Selectively Doped n-InAlAs/InP Heterostructures Grown by MOCVD
- Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001}Film Using Coaxial Impact Collision Ion Scattering Spectroscopy
- Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
- Terminating Structure of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Surface Identified by Coaxial Impact Collision Ion Scattering Spectroscopy
- A Molecular and Jon-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Jon Beam
- Molecular Beam Epitaxy of InP Using Low Energy P^+ Ion Beam
- Epitaxial Growth of α-Fe Film on Si(111) Substrate by Low-Energy Direct Ion Beam Deposition
- Low-Temperature Silicon Epitaxial Growth by Photochemical Vapor Deposition Using Vacuum Ultraviolet Light
- Generation of Extremely High Vacuum with a New Sputter Ion Pump
- A Simultaneous RHEED/AES Combined System