Epitaxial Growth of α-Fe Film on Si(111) Substrate by Low-Energy Direct Ion Beam Deposition
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概要
- 論文の詳細を見る
Fe film growth on Si(111) substrate was carried out by low-energy direct ion beam deposition. Fe films of about 1000Å thick were grown at Fe^+ ion energies of 10 eV, 20 eV, 50 eV and 100 eV without removing the native oxide layer on the Si substrate. Single-crystal α-Fe(111) films were obtained at 20 eV, 50 eV and 100 eV at room temperature, while (110)-preferred-oriented α-Fe film was obtained at 10 eV. Cross-sectional high-resolution transmission electron microscopy (TEM) studies show that the removal of the native oxide layers on the Si substrates by Fe^+ ion irradiation results in the epitaxial ordering of the α-Fe films when the films are grown at 20 eV, 50 eV and 100 eV.
- 社団法人応用物理学会の論文
- 1993-07-01
著者
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SHIMIZU Saburo
ULVAC JAPAN, Ltd
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Seki Seiji
Ulvac Japan Ltd.
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Shimizu Saburo
Ulvac Corporation
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Shimizu Saburo
Ulvac Japan Ltd.
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SASAKI Naruyasu
ULVAC JAPAN, Ltd.
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Sasaki Naruyasu
Ulvac Japan Ltd.
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