Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-01-15
著者
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Shimizu Masahiro
Ulsi Development Center Mitsubishi Electric Corporation
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Hara S
Advanced Industrial Science And Technology (aist) Power Electronics Research Center:ultra-low-loss P
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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IDE Toshihide
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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SHIMIZU Mitsuaki
Electrotechnical Laboratory (ETL)
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SHEN Xu-Qiang
Electrotechnical Laboratory (ETL)
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OKUMURA Hajime
Electrotechnical Laboratory (ETL)
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IDE Toshihide
Electrotechnical Laboratory (ETL)
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CHO Sung-Hwan
Electrotechnical Laboratory (ETL)
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HARA Shiro
Electrotechnical Laboratory (ETL)
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SONODA Saki
ULVAC JAPAN, Ltd,
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SHIMIZU Saburo
ULVAC JAPAN, Ltd
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Okumura H
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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Okumura H
Neutron Scattering Laboratory Issp The University Of Tokyo
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Okumura Hajime
Electrotechnical Laboratory
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Shen Xu-qiang
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shen X‐q
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Cho Sung-hak
Electrotechnical Laboratory (etl)
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Sonoda S
Lvac Inc.
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Sonoda Saki
Ulvac Inc.
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Ide Toshihide
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Okunuma H
National Institute Of Advanced Industrial Science And Technology
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Shimizu S
R&d Association Of Future Electron Devices C/o National Institute Of Advanced Industrial Science
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Shimizu Saburo
Ulvac Corporation
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