Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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Cho Dong-hyun
National Institute Of Advance Industrial Science And Technology (aist) Power Electronics Research Ce
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SHIMIZU Mitsuaki
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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OKUMURA Hajime
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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IDE Toshihide
National Institute of Advanced Industrial Science and Technology (AIST)
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SHIM Byoungrho
National Institute of Advanced Industrial Science and Technology (AIST)
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Cho Dong-hyun
National Institute Of Advanced Industrial Science And Technology (aist)
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Shimizu M
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Okita Hideyuki
Department Of Electrical Engineering Science University Of Tokyo
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