MOCVD-Pb(Zr,Ti)O_3薄膜の電気的特性のグレインサイズ依存性
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概要
- 論文の詳細を見る
MOCVD-Pb(Zr,Ti)O_3(PZT)薄膜のグレインサイズを, Ir下部電極のグレインサイズおよびPZT薄膜の成長速度を変化させることで制御することができた。Ir/PZT/Irキャパシタにおいては, Ir下部電極のグレインサイズが50nmから200nmまで増加するのに伴い, PZT薄膜のグレインサイズも120nmから240nmまで増加した。グレインサイズの増加とともに比誘電率, 残留分極は増加し, 抗電界は減少した。このような電気的特性のグレインサイズ依存性はバルクセラミックスにおけるサイズ効果と同じであった。
- 社団法人電子情報通信学会の論文
- 1999-02-16
著者
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藤沢 浩訓
姫路工業大学大学院工学研究科電気系工学専攻
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清水 勝
姫路工業大学大学院工学研究科電気系工学専攻
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丹生 博彦
姫路工業大学大学院工学研究科電気系工学専攻
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Shimizu Masahiro
Ulsi Development Center Mitsubishi Electric Corporation
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丹生 博彦
兵庫県立大学大学院工学研究科 電気系工学専攻:姫路工業大学大学院工学研究科 電気系工学専攻
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Fujisawa Hironori
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Hitneji
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中嶋 誠二
姫路工業大学工学部電子工学科
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