圧電応答顕微鏡による強誘電体Pb(Zr,Ti)O_3薄膜の分極反転過程の観察(<特集>半導体エレクトロニクス)
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概要
- 論文の詳細を見る
Polarization switching processes in epitaxial Pb (Zr,Ti)O_3 (PZT) thin films grown on SrRuO_3/SrTiO_3(1OO) were observed using piezoresponse scanning force microscopy (PFM). PFM observations were carried out directly on the PZT surface and with and on Pt top electrodes. XRD patterns exhibited that PZT thin film had only 180° domains because of a tetragonal structure and completely (001)-orientation. From PFM observations directly on PZT film, it was found that domain wall velocity in the vertical direction was estimated 89m/s. PFM observations with and on the top electrode revealed that the polarization switching processes were dependent on the switching pulse voltage. At lower switching pulse voltage regions (〜 1.5K), the polarization switching occurred from only the latent nuclei. On the other hand, at higher switching pulse voltage (>2V_c), the new nucleations during switching period were observed.
- 社団法人日本材料学会の論文
- 2002-09-15
著者
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藤沢 浩訓
姫路工業大学大学院工学研究科電気系工学専攻
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清水 勝
姫路工業大学大学院工学研究科電気系工学専攻
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丹生 博彦
姫路工業大学大学院工学研究科電気系工学専攻
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丹生 博彦
兵庫県立大学大学院工学研究科 電気系工学専攻:姫路工業大学大学院工学研究科 電気系工学専攻
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八木 達也
姫路工業大学大学院工学研究科電気系工学
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Mitsugi Satoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shimizu M
Tokyo Inst. Technology Yokohama
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Shimizu M
Tokyo Univ. Agriculture & Technol. Koganei
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藤沢 浩訓
Dep. Of Innovative And Engineered Materials Tokyo Inst. Of Technol.
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